Description

Bis(N,N'-Di-I-Propylacetamidinato) Cobalt(Ii) CAS NO 635680-58-9 is a high-purity organometallic compound belonging to the cobalt amidinate family. This compound serves as a critical precursor for the deposition of cobalt-containing thin films via advanced chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. It is essential for manufacturers and R&D facilities in the semiconductor, microelectronics, and catalysis industries seeking to integrate high-performance cobalt-based materials into next-generation devices.

Application

• Semiconductor Manufacturing: As a volatile precursor for the CVD and ALD of cobalt metal, cobalt nitride, and cobalt oxide thin films for interconnects, barriers, and electrodes.
• Microelectronics: Deposition of conformal cobalt films for advanced logic and memory device fabrication, including DRAM and 3D NAND structures.
• Catalysis Research: Used as a catalyst precursor in homogeneous and heterogeneous catalysis for organic synthesis and polymerization reactions.
• Surface Engineering: For creating functional cobalt-based coatings on various substrates to enhance wear resistance, corrosion protection, or magnetic properties.
• Nanomaterials Synthesis: A key starting material for the controlled synthesis of cobalt nanoparticles and nanostructures with defined size and morphology.
• Solar Energy: Potential use in depositing thin films for photovoltaic cells and photoelectrochemical water-splitting applications.

Basic Information

Product Name	Bis(N,N'-Di-I-Propylacetamidinato) Cobalt(Ii)
CAS No.	635680-58-9
Molecular Formula	C16H34CoN4
Molecular Weight	341.40 g/mol
Synonyms	Cobalt(II) bis(N,N'-diisopropylacetamidinate); Cobalt bis(diisopropylacetamidinate); Co(DIPAMD)2; Cobalt amidinate; Bis(diisopropylacetamidinato)cobalt; Cobalt N,N'-diisopropylacetamidinate; ALD/CVD Cobalt Precursor; Cobalt complex with N,N'-diisopropylcarboxamidine
EINECS	Contact for details

Quality Control

Our Bis(N,N'-Di-I-Propylacetamidinato) Cobalt(Ii) is manufactured under stringent conditions to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of semiconductor and advanced materials applications. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing purity, metal content, and impurity profiles. We adhere to relevant quality management standards to guarantee product integrity and supply chain reliability.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., argon or nitrogen) due to its sensitivity to moisture and oxidation. Keep away from heat and incompatible materials.

Specification

Item	Specification
Appearance	Dark green to brown solid or crystals
Identification (IR)	Conforms to structure
Purity (HPLC)	≥ 99.5%
Cobalt (Co) Content	17.0 - 17.5 %
Melting Point	Contact for details
Volatility	Suitable for CVD/ALD processes
Trace Metals (ICP-MS)	≤ 10 ppm total (Na, K, Ca, Fe, etc.)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.