Description

Trioctylarsine is a versatile organoarsenic compound primarily utilized as a key precursor in advanced material synthesis. Its value lies in its role as a highly effective p-type dopant source and a crucial reagent for the production of III-V semiconductor materials. This chemical is essential for manufacturers and R&D facilities in the electronics, optoelectronics, and specialty chemical sectors seeking reliable, high-purity intermediates for cutting-edge applications.

Application

• Semiconductor Manufacturing: A critical p-type dopant source in the Metal-Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE) of gallium arsenide (GaAs) and other III-V compound semiconductors.
• Optoelectronic Devices: Used in the production of light-emitting diodes (LEDs), laser diodes, and high-efficiency solar cells.
• Specialty Catalyst Synthesis: Serves as a ligand or precursor in the development of specialized catalysts for organic synthesis and polymerization reactions.
• Chemical Vapor Deposition (CVD): Acts as an arsenic source in thin-film deposition processes for electronic and optical coatings.
• Research & Development: An important reagent in academic and industrial labs for exploring new semiconductor materials and nanostructures.
• Photonics: Employed in the fabrication of photonic crystals and integrated optical circuits.

Basic Information

Product Name	Trioctylarsine
CAS No.	64048-97-1
Molecular Formula	C24H51As
Molecular Weight	414.56 g/mol
Synonyms	Tris(n-octyl)arsine; Arsine, trioctyl-; Tri-n-octylarsine; TOAs; Tris(octyl)arsine; Octylarsine; Arsenic trioctyl; As(C8H17)3
EINECS	Contact for details

Quality Control

Our Trioctylarsine is produced and handled under stringent quality management systems to ensure batch-to-batch consistency and high purity suitable for electronic-grade applications. We provide comprehensive Certificates of Analysis (COA) with each shipment, detailing key parameters such as assay, identity, and impurity profiles. Our quality commitment aligns with the exacting standards required for semiconductor precursor materials.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area under an inert atmosphere (e.g., nitrogen or argon) due to its sensitivity to oxidation. Recommended storage temperature is 2-8°C to maintain optimal stability. Keep away from heat, sparks, open flames, and strong oxidizing agents.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms
Assay (GC)	≥ 98.0%
Density (at 20°C)	0.89 - 0.91 g/mL
Refractive Index (n20D)	1.470 - 1.474
Heavy Metals (as Pb)	≤ 10 ppm

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.