Description

Hexakis(Ethylamino)Disilane (99.995%-Si) Puratrem is a high-purity organosilicon compound characterized by its six ethylamino substituents on a disilane backbone. This material is critical for advanced materials science, serving as a highly reactive precursor for depositing silicon-containing thin films. It is essential for manufacturers and R&D facilities in the semiconductor, photovoltaics, and specialty chemical sectors. The ultra-high silicon purity (99.995%) ensures superior performance and consistency in demanding applications.

Application

• Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): As a key silicon and nitrogen source for depositing silicon nitride (SiNx), silicon carbonitride (SiCN), or other silicon-based dielectric and barrier films.
• Semiconductor Manufacturing: Precursor for gate dielectrics, sidewall spacers, and passivation layers in advanced logic and memory device fabrication.
• Photovoltaics: Used in the deposition of anti-reflective and passivation coatings for high-efficiency solar cells.
• Specialty Polymers & Ceramics: As a reactive monomer or cross-linking agent in the synthesis of novel silicon-based polymers, pre-ceramic polymers, and advanced composites.
• Surface Functionalization: For modifying material surfaces with amino-silane groups to alter wettability, adhesion, or biocompatibility.
• Research & Development: A valuable reagent for exploring new synthetic pathways in organosilicon chemistry and materials science.

Basic Information

Product Name	Hexakis(Ethylamino)Disilane (99.995%-Si) Puratrem
CAS No.	532980-53-3
Molecular Formula	C12H36N6Si2
Molecular Weight	320.66 g/mol
Synonyms	Bis[bis(ethylamino)silyl]amine; 1,1,1,2,2,2-Hexakis(ethylamino)disilane; Disilane, hexakis(ethylamino)-; N,N',N''-Tris[bis(ethylamino)silyl]amine; Ethylamino Disilane Precursor; High-Purity Si Precursor; Si(99.995%) ALD/CVD Precursor
EINECS	Contact for details

Quality Control

Our Hexakis(Ethylamino)Disilane Puratrem is manufactured under stringent controls to meet the exacting requirements of the electronics industry. Each batch undergoes rigorous analytical testing, including assay by NMR or titration, impurity profiling via GC-MS or HPLC, and elemental analysis for silicon and metallic contaminants. A comprehensive Certificate of Analysis (COA) detailing purity, identity, and specific impurity levels is provided with every shipment to ensure traceability and quality assurance.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated place at room temperature (15-25°C). Due to its hygroscopic (moisture-sensitive) nature, containers must be kept sealed under an inert atmosphere (argon or nitrogen) when not in use to prevent degradation. Keep away from heat, sparks, and open flame.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms to structure
Assay (by GC or NMR)	≥ 98.0%
Silicon (Si) Purity	≥ 99.995%
Specific Impurities (GC-MS)	Reported on COA
Metallic Impurities (ICP-MS)	< 10 ppm total
Water Content (KF)	< 0.1%

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.