Description

Bis(Ethylcyclopentadienyl)Tungsten Dihydride is a highly specialized organometallic compound, primarily utilized as a volatile precursor in advanced materials synthesis. This compound matters for its role in depositing high-purity tungsten-containing thin films, which are critical for next-generation semiconductor and electronic applications. Industries such as microelectronics, catalysis research, and surface engineering need this material for its ability to enable precise, low-temperature chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes.

Application

• Chemical Vapor Deposition (CVD) Precursor: For depositing tungsten, tungsten carbide, or tungsten nitride thin films on semiconductor wafers and other substrates.
• Atomic Layer Deposition (ALD) Source: Enables the growth of ultra-thin, conformal tungsten-based layers for advanced nanoelectronics and memory devices.
• Catalysis Research: Serves as a catalyst precursor or model compound in organometallic chemistry and homogeneous catalysis studies.
• Surface Modification: Used to create wear-resistant or diffusion-barrier coatings on precision engineering components.
• Materials Science R&D: A key reagent in the synthesis of novel tungsten-containing polymers, clusters, and nanocomposites.
• Optical and Photonic Coatings: Potential use in depositing films for specialized optical applications.

Basic Information

Item	Details
Product Name	Bis(Ethylcyclopentadienyl)Tungsten Dihydride
CAS No.	308847-90-7
Molecular Formula	C14H20W
Molecular Weight	396.15 g/mol
Synonyms	Bis(ethylcyclopentadienyl)tungsten(IV) dihydride; Diethylcyclopentadienyltungsten Dihydride; (C2H5C5H4)2WH2; Tungsten, dihydrobis(η5-1-ethyl-2,4-cyclopentadien-1-yl)-; Tungstenocene dihydride derivative; EtCp2WH2; Organotungsten precursor; Tungsten CVD/ALD precursor.
EINECS	Contact for details

Quality Control

Our Bis(Ethylcyclopentadienyl)Tungsten Dihydride is produced and handled under stringent quality protocols to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is characterized using advanced analytical techniques, including NMR, FT-IR, and elemental analysis. A comprehensive Certificate of Analysis (COA) detailing purity, identity, and impurity profiles is provided with every shipment to support your quality assurance and process validation requirements.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (argon or nitrogen) at temperatures between 2°C and 8°C (refrigerated) to maximize stability. This material is hygroscopic (moisture-sensitive) and easily oxidized; therefore, it must be handled exclusively in a controlled, moisture-free, and oxygen-free environment (glove box or Schlenk line).

Specification

Item	Specification
Appearance	Yellow to orange crystalline solid or powder
Identification (IR)	Conforms to structure
Purity (NMR / Elemental Analysis)	≥ 95.0%
Tungsten (W) Content	46.0 - 47.0 %
Volatile Residuals (GC)	≤ 1.0%

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.