Description

Gallium (III) Ethoxide is a metal-organic compound of gallium, serving as a versatile precursor in advanced materials synthesis. This compound is valued for its role in depositing high-purity gallium oxide films and other functional materials through solution-based and vapor-phase processes. It is essential for researchers and manufacturers in the semiconductor, electronics, and specialty ceramics industries seeking precise stoichiometric control.

Application

• Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): A key precursor for depositing thin films of gallium oxide (Ga₂O₃) for power electronics and optoelectronic devices.
• Sol-Gel Processing: Used in the synthesis of high-purity gallium-containing ceramics, glasses, and nanocomposites.
• Catalyst Synthesis: Acts as a catalyst or catalyst precursor in specialized organic transformations and polymerization reactions.
• Nanomaterial Fabrication: Employed in the production of gallium-based nanoparticles and nanowires for advanced sensors and catalytic applications.
• Research & Development: A critical starting material in academic and industrial R&D for exploring new metal-organic frameworks (MOFs) and hybrid materials.
• Phosphor & Luminescent Materials: Used in the preparation of doped gallium oxide materials for phosphors and scintillators.
• Protective Coatings: Forms corrosion-resistant and thermally stable gallium oxide coatings on various substrates.

Basic Information

Product Name	Gallium (III) Ethoxide
CAS No.	2572-25-0
Molecular Formula	C6H15GaO3
Molecular Weight	190.90 g/mol
Synonyms	Gallium Triethoxide; Triethoxygallium; Ethyl Gallate; Gallium Ethylate; Gallium(III) Ethylate; Tris(ethoxy)gallium; Gallium Triethylate
EINECS	219-919-5

Quality Control

Our Gallium (III) Ethoxide is produced and handled under strict quality management protocols. Each batch undergoes comprehensive analysis to ensure high purity and consistency, with key parameters verified by techniques including titration, ICP-OES, and NMR. A Certificate of Analysis (COA) detailing batch-specific results is provided with every shipment to support your quality assurance and regulatory needs.

Storage

Preserve in a tightly closed container, protected from light. Due to its hygroscopic nature, this material must be stored under an inert atmosphere (e.g., argon or nitrogen) in a cool, dry place. Recommended storage temperature is 2-8°C for long-term stability. Handle and open containers only in a moisture-free environment, such as a glovebox.

Specification

Item	Specification
Appearance	White to off-white powder or crystals
Identification (IR)	Conforms to structure
Assay (Ga2O3 basis)	≥ 99.9%
Gallium (Ga) Content	Contact for details
Trace Metals (ICP-OES)	≤ 100 ppm total
Solubility	Soluble in organic solvents

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.