Description

Gallium Ethoxide is a metal-organic compound primarily used as a precursor in advanced materials synthesis. Its value lies in its role as a high-purity gallium source for the production of specialty oxides and thin films. This product is essential for manufacturers and research institutions in the semiconductor, optoelectronics, and catalysis industries seeking reliable, high-quality precursors for material deposition processes.

Application

• Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): A key precursor for depositing high-purity gallium oxide (Ga₂O₃) thin films for power electronics and UV optoelectronic devices.
• Sol-Gel Processing: Used in the synthesis of gallium-containing ceramic and glass materials, including advanced optical coatings and catalysts.
• Catalyst Synthesis: Serves as a starting material for preparing homogeneous and heterogeneous catalysts used in organic synthesis and petrochemical processes.
• Nanomaterial Fabrication: A precursor for the synthesis of gallium-based nanoparticles and nanowires with applications in sensors and nanoelectronics.
• Research & Development: Employed in academic and industrial R&D for exploring new gallium-containing compounds and materials.

Basic Information

Product Name	Gallium Ethoxide
CAS No.	257-25-0
Molecular Formula	C6H15GaO3
Molecular Weight	193.90 g/mol
Synonyms	Gallium(III) ethoxide; Triethoxygallium; Ethyl gallate; Gallium triethoxide; Gallium ethylate; Tris(ethoxy)gallium; Gallium triethylate
EINECS	205-960-5

Quality Control

Our Gallium Ethoxide is produced under stringent quality management protocols. Each batch undergoes comprehensive analytical testing to ensure high purity and consistency, meeting the exacting requirements of advanced materials manufacturing. A detailed Certificate of Analysis (COA) is provided with every shipment, documenting key parameters such as assay, metal impurities, and solvent content.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). Due to its hygroscopic (moisture-sensitive) nature, containers must be kept sealed under an inert atmosphere (argon or nitrogen) to prevent decomposition. Keep away from incompatible materials such as strong acids and oxidizers.

Specification

Item	Specification
Appearance	White to off-white powder or crystalline solid
Identification (IR)	Conforms to structure
Assay (Ga2O3 basis)	≥ 99.9%
Gallium (Ga) Content	35.0 - 36.5 %
Trace Metals (ICP-MS)	≤ 100 ppm total
Solvent Residue (GC)	Meets internal specifications

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.