Description

Gallium Arsenide Phosphide is a critical III-V compound semiconductor material with a tunable direct bandgap. This property is essential for manufacturing optoelectronic devices that emit light at specific, controlled wavelengths. It is a foundational material for industries requiring high-performance light-emitting components and advanced electronic applications.

Application

• Manufacturing of high-brightness Light-Emitting Diodes (LEDs) for displays, indicators, and automotive lighting.
• Core material in the production of laser diodes for optical communications, data storage, and sensing systems.
• Fabrication of photovoltaic cells and high-efficiency solar energy devices.
• Substrate and epitaxial layer material for high-speed electronic and optoelectronic integrated circuits.
• Used in specialized photodetectors and sensors for industrial and scientific instrumentation.
• Research and development of novel semiconductor devices and nanotechnology applications.

Basic Information

Product Name	Gallium Arsenide Phosphide
CAS No.	60953-19-7
Molecular Formula	GaAsxP1-x (where 0<x<1)
Molecular Weight	Varies with composition
Synonyms	Gallium Arsenic Phosphide; GaAsP; Gallium(III) Arsenide Phosphide; III-V Semiconductor GaAsP; Ga-As-P; (Gallium,Arsenic,Phosphorus); Arsenic Gallium Phosphide
EINECS	Contact for details

Quality Control

Our Gallium Arsenide Phosphide is produced and tested under stringent quality management systems to ensure batch-to-batch consistency and performance reliability for demanding semiconductor applications. Each lot is characterized for critical parameters including composition (x value), crystalline quality, and impurity levels. A comprehensive Certificate of Analysis (COA) detailing purity, crystallographic data, and electronic properties is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). The material should be kept in a controlled environment to prevent surface oxidation or contamination. Handle and store under inert atmosphere (e.g., nitrogen or argon) for long-term preservation of optimal electronic properties.

Specification

Item	Specification
Appearance	Crystalline solid, wafer, or epitaxial layer
Composition (x in GaAsxP1-x)	Customizable (e.g., 0.35, 0.40, 0.65)
Bandgap Energy	1.42 - 2.26 eV (Tunable with composition)
Primary Purity	> 99.99% (4N) / > 99.999% (5N) available
Crystal Structure	Zinc Blende (Cubic)
Lattice Constant	5.45 - 5.65 Å (Varies with composition)
Carrier Concentration	Specified per grade (n-type or p-type)
Mobility	Reported on COA
Major Impurities (Fe, Cu, Si, etc.)	< 10 ppm total (for electronic grade)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.