Description

Indium Arsenide (InAs) is a critical III-V compound semiconductor material prized for its exceptionally high electron mobility and narrow direct bandgap. This unique combination of properties makes it indispensable for advanced optoelectronic and high-frequency electronic devices. It is a fundamental material for manufacturers and R&D facilities in the semiconductor, infrared technology, and quantum computing sectors seeking to push the boundaries of performance.

Application

• Infrared Detectors & Sensors: Core material for high-sensitivity photodetectors and focal plane arrays operating in the mid- to long-wavelength infrared (MWIR/LWIR) spectrum.
• High-Electron-Mobility Transistors (HEMTs): Used as the channel layer in ultra-high-speed, low-noise transistors for millimeter-wave and terahertz applications.
• Quantum Cascade Lasers (QCLs): An essential component in the active region of lasers designed for infrared spectroscopy, gas sensing, and free-space communication.
• Thermophotovoltaic (TPV) Cells: Employed to convert infrared radiation into electrical energy in specialized power generation systems.
• Semiconductor Research & Epitaxy: Serves as a substrate or epitaxial layer for exploring novel quantum well, superlattice, and heterostructure devices.
• Hall Effect Sensors: Utilized in the production of highly sensitive magnetic field sensors due to its superior electron transport properties.

Basic Information

Product Name	Indium Arsenide
CAS No.	1303-11-3
Molecular Formula	InAs
Molecular Weight	189.74 g/mol
Synonyms	Indium monoarsenide; Indium(III) arsenide; Arsanylidyneindium; Indium arsenide (InAs); III-V semiconductor InAs; EINECS 215-116-8

Quality Control

Our Indium Arsenide is produced and tested under stringent quality management protocols to ensure batch-to-batch consistency and performance reliability for demanding semiconductor applications. We provide comprehensive Certificates of Analysis (COA) detailing key parameters such as purity, crystalline structure, and elemental composition. Specifications can be aligned with research-grade or epitaxial-grade requirements.

Storage

Preserve in a tightly closed container, protected from light and moisture. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). Keep away from incompatible materials such as strong acids and oxidizing agents. Due to its nature as a semiconductor compound containing arsenic, appropriate safety and handling procedures must be observed.

Specification

Item	Specification
Appearance	Gray-black crystalline pieces or powder
Identification (XRD)	Conforms to standard
Purity (InAs Basis)	≥ 99.99% (4N)
Crystal Structure	Zinc Blende (Cubic)
Carrier Concentration	Contact for details
Electron Mobility	Contact for details
Trace Metals (ICP-MS)	< 10 ppm each

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.