Description

Cadmium Telluride is a critical II-VI compound semiconductor material with a direct bandgap. Its unique optoelectronic properties make it indispensable for advanced thin-film photovoltaic technology. This high-purity material is essential for manufacturers and research institutions in the semiconductor, renewable energy, and infrared optics sectors.

Application

• Thin-Film Solar Cells (CdTe PV): The primary application, serving as the core light-absorbing layer in high-efficiency, cost-effective photovoltaic modules.
• Semiconductor Substrates & Epitaxy: Used as a substrate for the epitaxial growth of mercury cadmium telluride (MCT) and other compound semiconductors.
• γ-Ray & X-Ray Detectors: Fabrication of high-resolution room-temperature radiation detectors for medical imaging and security screening.
• Electro-Optic Modulators: Key material in devices that control light using electric fields for telecommunications and laser systems.
• Infrared (IR) Optical Windows & Lenses: Manufacturing of lenses and windows transparent to infrared radiation for thermal imaging and spectroscopy.
• Quantum Dot Synthesis: Precursor material for producing cadmium telluride quantum dots used in display technology and biological labeling.
• Thermoelectric Devices: Research and development of materials for converting waste heat into electrical energy.

Basic Information

Product Name	Cadmium Telluride
CAS No.	1306-25-8
Molecular Formula	CdTe
Molecular Weight	240.01 g/mol
Synonyms	Cadmium monotelluride; Telluroxocadmium; Cadmium(II) telluride; Irtran-6; CdTe; Cadmium telluride (CdTe); Cadmium-tellurium alloy
EINECS	215-149-9

Quality Control

Our Cadmium Telluride is produced and tested under stringent quality management protocols to ensure batch-to-batch consistency and high performance in demanding applications. We provide comprehensive Certificates of Analysis (COA) detailing purity, crystalline structure, and key impurity profiles. Our quality systems are designed to meet the exacting standards of the semiconductor and photovoltaic industries.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area away from incompatible materials. For long-term stability, storage under an inert atmosphere such as argon or nitrogen is recommended to prevent surface oxidation.

Specification

Item	Specification
Appearance	Dark gray to black crystals or powder
Assay (CdTe)	≥ 99.99% (4N), 99.999% (5N) available
Crystal Structure	Zinc Blende (Cubic)
Bandgap (at 300K)	~1.44 eV
Particle Size	Customizable (Powder, lumps, ingots, sputtering targets)
Trace Metals (ICP-MS)	≤ 10 ppm total (Fe, Cu, Ni, Na, etc.)
Oxygen Content	≤ 50 ppm
Carrier Concentration / Resistivity	Available upon request

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.