Description

Triphenylsulfonium Nonaflate is a high-purity photoacid generator (PAG) salt, a critical component in advanced photoresist formulations. Its primary value lies in generating a strong acid upon exposure to deep ultraviolet (DUV) or electron beam (e-beam) radiation, initiating the chemical amplification process essential for high-resolution patterning. This compound is indispensable for manufacturers in the semiconductor and microelectronics industries, particularly for producing integrated circuits and microelectromechanical systems (MEMS).

Application

• Semiconductor Photolithography: A key photoacid generator in chemically amplified resists (CARs) for DUV (248nm, 193nm) and e-beam lithography processes.
• Advanced Packaging: Used in the fabrication of redistribution layers (RDLs) and through-silicon vias (TSVs) for 2.5D and 3D integrated circuit packaging.
• Micro-Electro-Mechanical Systems (MEMS): Enables high-aspect-ratio patterning for creating intricate mechanical and sensor structures on silicon wafers.
• Photomask Production: Employed in resist formulations for creating the high-precision chromium-on-glass masks used in photolithography.
• Printed Circuit Board (PCB) Manufacturing: Used in advanced solder mask and dielectric layer patterning for high-density interconnect (HDI) boards.
• Optical Device Fabrication: Applicable in the patterning of waveguides, gratings, and other micro-optical elements.
• Research & Development: Serves as a benchmark PAG in academic and industrial R&D for developing next-generation photoresist materials and lithographic techniques.

Basic Information

Product Name	Triphenylsulfonium Nonaflate
CAS No.	144317-44-2
Molecular Formula	C21H15F9O3S2
Molecular Weight	550.46 g/mol
Synonyms	Triphenylsulfonium Perfluoro-1-butanesulfonate; Triphenylsulfonium Perfluorobutanesulfonate; S-(Triphenyl)-Perfluorobutanesulfonothioate; TPS-Nf; Triphenylsulfonium Nonafluorobutanesulfonate; Photoacid Generator PAG 1; Nonafluorobutanesulfonic Acid Triphenylsulfonium Salt
EINECS	Contact for details

Quality Control

Our Triphenylsulfonium Nonaflate is manufactured under strict quality management systems to ensure batch-to-batch consistency and high performance in sensitive lithographic applications. Each lot undergoes rigorous analytical testing, including HPLC for purity and NMR for structural confirmation, to meet the exacting standards of the semiconductor industry. A comprehensive Certificate of Analysis (COA) detailing purity, assay, and critical impurity profiles (including metal ions) is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at a controlled room temperature (15-25°C). This material is hygroscopic (moisture-sensitive) and should be handled in a dry, inert atmosphere or under anhydrous conditions to prevent decomposition. Keep away from strong bases and incompatible materials.

Specification

Item	Specification
Appearance	White to off-white crystalline powder
Identification (IR)	Conforms to structure
Assay (HPLC)	≥ 99.0%
Purity (HPLC Area %)	≥ 99.5%
Water Content (KF)	≤ 0.5%
Residue on Ignition	≤ 0.1%
Heavy Metals (as Pb)	≤ 10 ppm
Specific Metal Ions (ICP-MS)	Na, K, Ca, Fe, each ≤ 5 ppm

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.