Description

Gallium Ditelluride is an inorganic compound of significant interest in advanced materials science and semiconductor research. Its unique electronic and optical properties make it a valuable precursor for the development of next-generation electronic and optoelectronic devices. This material is primarily sought by researchers and manufacturers in the fields of semiconductor fabrication, thin-film technology, and thermoelectric materials.

Application

• Research and development of novel semiconductor compounds and heterostructures.
• Precursor material for the synthesis of thin-film photovoltaic and optoelectronic components.
• Fabrication of specialized thermoelectric devices for energy conversion.
• Experimental studies in solid-state physics and materials science.
• Potential use in infrared detectors and sensors.
• Component in the development of phase-change memory materials.

Basic Information

Product Name	Gallium Ditelluride
CAS No.	12689-99-5
Molecular Formula	GaTe2
Molecular Weight	322.32 g/mol
Synonyms	Gallium(IV) telluride; Ditellurogallane; Gallium telluride (GaTe2); Gallium monotelluride (incorrect but common); EINECS 235-772-0

Quality Control

Our Gallium Ditelluride is produced and handled under controlled conditions to ensure batch-to-batch consistency and high purity. All materials are subjected to rigorous analytical testing, including X-ray diffraction (XRD) for phase identification and spectroscopic methods for purity verification. A Certificate of Analysis (COA) detailing specific lot results is provided with each shipment to support your research and quality assurance protocols.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). This material is moisture-sensitive (hygroscopic) and should be handled under an inert atmosphere such as argon or nitrogen to prevent oxidation and degradation.

Specification

Item	Specification
Appearance	Dark gray to black crystalline pieces or powder
Identification (XRD)	Conforms to standard pattern for GaTe2
Purity (Metals Basis)	≥ 99.99% (4N)
Purity (GaTe2 Phase)	≥ 99.5%
Particle Size	Customizable (-100 mesh, -325 mesh, etc.)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.