Description

Gallium Telluride is an inorganic compound of significant interest in advanced materials science and semiconductor technology. Its unique electronic and optical properties make it a critical precursor for the fabrication of specialized thin films and optoelectronic devices. This high-purity material is essential for research and production in the semiconductor, photonics, and infrared technology sectors, where precise stoichiometry and material quality are paramount for device performance and reliability.

Application

• Semiconductor Manufacturing: As a precursor material for the epitaxial growth of gallium telluride (GaTe) thin films, a promising semiconductor for electronic and optoelectronic applications.
• Infrared (IR) Optics: Used in the research and development of IR-sensitive detectors and lenses due to its favorable optical properties in specific wavelength ranges.
• Photovoltaic Research: Investigated as a component in novel, high-efficiency thin-film solar cells and photodetectors.
• Solid-State Physics Studies: Serves as a key material for fundamental research into two-dimensional (2D) materials, layered semiconductors, and their quantum phenomena.
• Thermoelectric Materials: Explored for use in thermoelectric generators, which convert heat directly into electricity, leveraging its specific electronic structure.
• Catalysis Research: Employed in studies as a catalyst or catalyst support for certain chemical reactions.

Basic Information

Product Name	Gallium Telluride
CAS No.	12024-27-0
Molecular Formula	Ga2Te3
Molecular Weight	522.25 g/mol
Synonyms	Digallium Tritelluride; Gallium(III) Telluride; Gallium Sesquitelluride; GaTe; Ga2Te3; Gallium Telluride (Ga2Te3); Tellanylidenegallium
EINECS	234-691-8

Quality Control

Our Gallium Telluride is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity. Each lot is analyzed using advanced techniques such as X-ray diffraction (XRD) for phase identification and inductively coupled plasma (ICP) spectroscopy for elemental assay and impurity profiling. A comprehensive Certificate of Analysis (COA) detailing all specifications and test results is provided with every shipment to support your quality assurance and R&D documentation needs.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). This material is moisture-sensitive (hygroscopic) and should be handled under an inert atmosphere (e.g., argon or nitrogen) when possible to prevent oxidation and degradation.

Specification

Item	Specification
Appearance	Dark gray to black pieces or powder
Identification (XRD)	Conforms to standard pattern for Ga2Te3
Assay (Ga2Te3)	≥ 99.99% (4N)
Purity (Metals basis)	≥ 99.99%
Trace Metals Analysis (ICP-MS)	< 100 ppm total
Oxygen Content	< 500 ppm
Particle Size (Optional)	Custom mesh sizes available

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.