Description

Gallium(III) Sulfide (CAS NO 12024-22-5) is a high-purity inorganic compound that serves as a critical precursor in advanced material science and electronics. Its unique semiconductor and optoelectronic properties make it indispensable for developing next-generation technologies. This material is primarily sought by manufacturers and research institutions in the semiconductor, photonics, and solid-state chemistry sectors for its role in thin-film deposition and specialized synthesis.

Application

• Semiconductor Manufacturing: As a precursor for the chemical vapor deposition (CVD) or atomic layer deposition (ALD) of gallium sulfide thin films.
• Optoelectronics & Photonics: Used in the research and development of photodetectors, light-emitting diodes (LEDs), and nonlinear optical devices.
• Solid-State Chemistry: A starting material for synthesizing complex chalcogenides and other ternary or quaternary semiconductor compounds.
• Energy Storage: Investigated as a component or coating material in advanced battery and supercapacitor electrodes.
• Catalysis Research: Explored as a catalyst or catalyst support in certain organic transformation reactions.
• Academic & Industrial R&D: Serves as a fundamental reagent for materials science research and prototype development.

Basic Information

Product Name	Gallium(III) Sulfide
CAS No.	12024-22-5
Molecular Formula	Ga2S3
Molecular Weight	235.64 g/mol
Synonyms	Digallium trisulfide; Gallium sesquisulfide; Gallium sulfide (Ga2S3); Gallium(3+) sulfide; Gallium trisulfide; EINECS 234-691-7
EINECS	234-691-7

Quality Control

Our Gallium(III) Sulfide is produced and handled under strict quality management protocols. Each batch undergoes comprehensive analytical testing to ensure high chemical purity and consistency. A detailed Certificate of Analysis (COA), providing specifications for assay, identity, and impurity profiles, is available for review and supplied with every order to support your quality assurance requirements.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). This material is moisture-sensitive (hygroscopic) and should be handled under an inert atmosphere such as argon or nitrogen to prevent oxidation and hydrolysis.

Specification

Item	Specification
Appearance	Yellow to orange crystalline powder or lumps
Identification (XRD/IR)	Conforms to standard
Assay (Ga2S3)	≥ 99.9% (4N)
Trace Metal Analysis (ICP-MS)	< 100 ppm total
Oxygen Content	Contact for details
Particle Size	Customizable (e.g., -100 mesh)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.