Description

Bis[Bis(Trimethylsilyl)Amino]-Germanium Ii is a highly specialized organogermanium compound featuring a reactive germanium(II) center stabilized by bulky silyl-substituted amido ligands. This compound matters as a versatile precursor in advanced materials science and organometallic synthesis, enabling the controlled deposition of germanium-containing films and the creation of novel germanium-based catalysts. It is primarily needed by researchers and manufacturers in the semiconductor, photovoltaic, and specialty chemical industries for developing next-generation electronic materials and exploring novel reaction pathways.

Application

• Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): Serves as a high-purity precursor for depositing thin films of germanium, germanium nitride, or germanium-carbon alloys on semiconductor wafers.
• Organometallic Synthesis & Catalysis: Acts as a key starting material for synthesizing novel germanium complexes and potential catalysts for polymerization or organic transformations.
• Materials Science Research: Used in the development of new germanium-based nanomaterials, quantum dots, and advanced photonic or electronic components.
• Pharmaceutical Intermediate Synthesis: Employed in exploratory research for creating novel organogermanium compounds with potential biological activity.
• Polymer Modification: Investigated for its use in introducing germanium into polymer backbones to alter material properties like refractive index or thermal stability.

Basic Information

Product Name	Bis[Bis(Trimethylsilyl)Amino]-Germanium Ii
CAS No.	55290-25-0
Molecular Formula	C12H36GeN2Si4
Molecular Weight	401.48 g/mol
Synonyms	Bis[bis(trimethylsilyl)amino]germanium; Germanium, bis[bis(trimethylsilyl)amino]-; Bis(hexamethyldisilazido)germanium(II); Germanium(II) bis(hexamethyldisilazide); Ge(HMDS)2; Ge[N(SiMe3)2]2; Germanium bis(trimethylsilyl)amide
EINECS	Contact for details

Quality Control

Our Bis[Bis(Trimethylsilyl)Amino]-Germanium Ii is produced and handled under strict quality management protocols to ensure batch-to-batch consistency and high purity, critical for sensitive applications like semiconductor fabrication. Each lot is analyzed using advanced spectroscopic and chromatographic techniques. A comprehensive Certificate of Analysis (COA) detailing purity, identity, and impurity profiles is provided with every shipment to support your research and quality assurance requirements.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at recommended temperatures between 2°C and 8°C (refrigerated) or under inert atmosphere (argon/nitrogen) as specified for the specific batch. This product is hygroscopic (moisture-sensitive) and light-sensitive; all handling should be performed under anhydrous, inert conditions using appropriate Schlenk-line or glovebox techniques to maintain purity and reactivity.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid or low-melting solid
Identification (IR)	Conforms to reference spectrum
Purity (NMR / GC)	≥ 95.0% (Typical 97-99%)
Germanium (Ge) Content	Contact for details

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.