Description

(Diphenylarsino)Dimethylgallium is an organometallic compound featuring both gallium and arsenic centers, making it a valuable precursor in advanced materials synthesis. This compound is critical for the controlled deposition of gallium arsenide (GaAs) and related III-V semiconductor thin films. It is primarily utilized by manufacturers and research institutions in the semiconductor, optoelectronics, and nanotechnology sectors for applications requiring high-purity materials.

Application

• Metal-Organic Chemical Vapor Deposition (MOCVD): A key precursor for the epitaxial growth of gallium arsenide (GaAs) and other III-V compound semiconductor layers.
• Advanced Semiconductor Fabrication: Used in the production of high-electron-mobility transistors (HEMTs), laser diodes, and photovoltaic cells.
• Nanomaterials Synthesis: Serves as a starting material for the synthesis of gallium arsenide nanoparticles and quantum dots with tailored optical properties.
• Research & Development: Employed in academic and industrial R&D for exploring new organometallic chemistry and novel material properties.
• Thin-Film Coating: Applied in atomic layer deposition (ALD) processes to create ultra-thin, conformal films for microelectronics.

Basic Information

Product Name	(Diphenylarsino)Dimethylgallium
CAS No.	94113-53-8
Molecular Formula	C14H17AsGa
Molecular Weight	307.91 g/mol
Synonyms	Dimethyl(diphenylarsino)gallium; Gallium, dimethyl(phenylarsino)-; (Diphenylarsino)dimethylgallane; (C6H5)2AsGa(CH3)2; DMGa(Diphenylarsine); Organogallium-arsine adduct
EINECS	Contact for details

Quality Control

Our (Diphenylarsino)Dimethylgallium is produced and handled under stringent quality management protocols. Each batch undergoes comprehensive analysis to ensure high purity and consistency, which is essential for reproducible results in sensitive deposition processes. A Certificate of Analysis (COA) detailing purity, identity, and impurity profiles is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (argon or nitrogen) at temperatures between 2°C and 8°C to minimize decomposition and maintain stability. Due to its properties as a strong alkali/organic solvent, easily oxidized, and highly volatile compound, it must be handled in a dry, well-ventilated environment using appropriate personal protective equipment.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid or solid
Identification (IR)	Conforms to structure
Purity (NMR / HPLC)	≥ 95.0%
Gallium (Ga) Content	22.0 - 23.5 %
Arsenic (As) Content	24.0 - 25.5 %
Volatile Metals (ICP-MS)	< 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.