Description

(Dimethylamino)Dimethylindium is a highly specialized organometallic compound used as a precursor in advanced material synthesis. This compound matters for its role in depositing high-purity indium-containing thin films, which are critical for next-generation electronic and optoelectronic devices. It is primarily needed by manufacturers in the semiconductor, LED, and photovoltaic industries for processes such as Metal-Organic Chemical Vapor Deposition (MOCVD) and Atomic Layer Deposition (ALD).

Application

• MOCVD Precursor for III-V Semiconductors: Essential for the deposition of indium nitride (InN), indium gallium nitride (InGaN), and other III-V compound semiconductor layers.
• Thin-Film Transistor (TFT) Fabrication: Used in the production of high-mobility oxide semiconductors for advanced display technologies.
• Optoelectronic Device Manufacturing: Key precursor for the active layers in high-efficiency light-emitting diodes (LEDs) and laser diodes (LDs).
• Photovoltaic Cell Production: Employed in the synthesis of thin-film solar cells, such as copper indium gallium selenide (CIGS) types.
• Atomic Layer Deposition (ALD): Enables the conformal and precise deposition of indium oxide (In₂O₃) films for sensors and transparent conductive oxides (TCOs).
• Research & Development: Serves as a vital reagent in academic and industrial R&D for exploring new semiconductor materials and nanostructures.

Basic Information

Product Name	(Dimethylamino)Dimethylindium
CAS No.	92274-82-3
Molecular Formula	C5H14InN
Molecular Weight	178.98 g/mol
Synonyms	Dimethyl( dimethylamino)indium; (Dimethylamido)dimethylindium(III); DMAndium; InMe2(NMe2); Indium(III) dimethyl(dimethylamido); N,N-Dimethylaminodimethylindium; (N,N-Dimethylamino)dimethylindane (archaic); MOCVD Grade Indium Precursor
EINECS	Contact for details

Quality Control

Our (Dimethylamino)Dimethylindium is produced under stringent conditions to meet the exacting purity requirements of the electronics industry. Each batch undergoes comprehensive analysis, including assay and trace metal analysis, to ensure compliance with high-purity semiconductor-grade standards. A Certificate of Analysis (COA) detailing specific results for purity, identity, and impurity profiles is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated place at room temperature (15-25°C). Due to its hygroscopic and highly volatile nature, this product must be handled and stored under an inert atmosphere (argon or nitrogen) using standard air-free techniques. Keep away from heat, sparks, and open flames.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms to structure
Assay (In Content)	> 99.9% (metals basis)
Purity (GC)	≥ 99.5%
Density (at 20°C)	~1.2 g/mL
Trace Metals (ICP-MS)	< 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.