Description

(N,N'-Di-sec-Butylacetamidinato)Copper(I) is a high-purity, organometallic copper complex widely utilized as a volatile precursor in advanced materials synthesis. This compound is valued for its role in facilitating precise, low-temperature deposition processes critical for modern electronics and nanotechnology. It is an essential material for research and development teams in the semiconductor, thin-film coating, and catalysis sectors seeking reliable, high-performance chemical vapor deposition (CVD) and atomic layer deposition (ALD) sources.

Application

• Chemical Vapor Deposition (CVD) Source: Acts as a volatile copper precursor for depositing high-purity copper or copper-containing thin films on various substrates.
• Atomic Layer Deposition (ALD) Precursor: Enables the controlled, layer-by-layer growth of ultra-thin copper films for advanced semiconductor devices and nanoscale coatings.
• Catalysis Research: Serves as a catalyst or catalyst precursor in organic synthesis and polymerization reactions, particularly where copper(I) complexes are active.
• Materials Science & Nanotechnology: Used in the research and development of novel nanomaterials, metal-organic frameworks (MOFs), and functional surfaces.
• Electronics Manufacturing: Critical for creating conductive pathways, seed layers, and interconnects in microchips and electronic components.
• Optical and Photonic Devices: Potential use in the deposition of films for solar cells, LEDs, and other optoelectronic applications.

Basic Information

Product Name	(N,N'-Di-sec-Butylacetamidinato)Copper(I)
CAS No.	695188-31-9
Molecular Formula	C10H21CuN2
Molecular Weight	232.83 g/mol
Synonyms	Copper(I) N,N'-di-sec-butylacetamidinate; Copper(I) di-sec-butylacetamidinate; Cu(amdsBu); (dsbamd)Cu(I); sec-Butylacetamidinato copper(I) complex; ALD/CVD Copper Precursor; Volatile Copper Complex; Copper Amidinate Precursor
EINECS	Contact for details

Quality Control

Our production of (N,N'-Di-sec-Butylacetamidinato)Copper(I) adheres to stringent quality protocols to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is characterized using advanced analytical techniques, including NMR, elemental analysis (EA), and inductively coupled plasma mass spectrometry (ICP-MS) to verify composition and minimize metallic impurities. A comprehensive Certificate of Analysis (COA) detailing purity, identity, and specific impurity profiles is provided with every shipment to support your quality assurance and R&D documentation.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., argon or nitrogen) to prevent oxidation and degradation. Keep away from heat, open flames, and incompatible materials.

Specification

Item	Specification
Appearance	Off-white to beige crystalline solid or powder
Identification (NMR)	Conforms to structure
Purity (NMR / EA)	≥ 98.0%
Copper (Cu) Content	26.5 - 27.5 %
Volatile Residue	≤ 0.5 %
Trace Metals (ICP-MS)	Contact for details

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.