Description

(tert-Butylimido)Tris(Ethylmethylamino)Tantalum is a high-purity organometallic compound used as a precursor in advanced thin-film deposition processes. This compound is critical for depositing high-quality tantalum nitride (TaN) and tantalum oxide (TaOx) films with precise stoichiometry and excellent conformality. It is essential for manufacturers in the semiconductor and microelectronics industries seeking to enhance device performance and miniaturization.

Application

• Atomic Layer Deposition (ALD): A key precursor for the conformal deposition of tantalum-based barrier and gate dielectric layers in advanced semiconductor devices.
• Chemical Vapor Deposition (CVD): Used in CVD processes to produce high-purity tantalum nitride films for diffusion barriers in copper interconnects.
• Thin-Film Capacitors: Enables the production of high-k dielectric layers for next-generation, miniaturized passive components.
• Optical Coatings: Serves as a precursor for depositing tantalum oxide films used in anti-reflective and protective optical coatings.
• Memory Devices: Facilitates the fabrication of critical layers in DRAM and other high-density memory chips.
• Research & Development: Employed in academic and industrial R&D for exploring new materials and deposition techniques in nanoelectronics.

Basic Information

Product Name	(tert-Butylimido)Tris(Ethylmethylamino)Tantalum
CAS No.	511292-99-2
Molecular Formula	C15H39N4Ta
Molecular Weight	446.43 g/mol
Synonyms	TBTEMT; TBTEMT Ta; Ta(NtBu)(NEtMe)3; tert-Butylimido-tris(ethylmethylamido)tantalum(V); (tert-Butylimido)tris(ethylmethylamido)tantalum; Tantalum(V) tert-butylimide tris(ethylmethylamide); TBTEMT Precursor; Tantalum ALD Precursor
EINECS	Contact for details

Quality Control

Our (tert-Butylimido)Tris(Ethylmethylamino)Tantalum is manufactured under stringent conditions to ensure the high purity and consistency required for semiconductor-grade applications. Each batch is analyzed using advanced techniques including NMR, GC-MS, and elemental analysis. A Certificate of Analysis (COA) detailing purity, metal content, and impurity profiles is provided with every shipment to guarantee compliance with your specific process requirements.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., nitrogen or argon) due to its moisture-sensitive and easily oxidized nature. Keep away from heat, open flames, and incompatible materials.

Specification

Item	Specification
Appearance	Clear, colorless to pale yellow liquid
Identification (NMR)	Conforms to structure
Purity (GC)	≥ 99.5%
Tantalum (Ta) Content	40.0 - 41.0 %
Chloride (Cl) Content	≤ 10 ppm
Metallic Impurities	≤ 20 ppm (total)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.