Description

Trimethyl(Trimethylphosphine)Indium is a highly specialized organometallic compound, primarily used as a precursor in advanced materials synthesis. This compound is critical for applications requiring high-purity indium deposition, offering precise control over material properties. It is essential for manufacturers and research institutions in the semiconductor, optoelectronics, and compound semiconductor industries seeking reliable, high-quality metalorganic sources.

Application

• Metalorganic Chemical Vapor Deposition (MOCVD): A key precursor for the epitaxial growth of indium-containing III-V semiconductor thin films, such as InP and InGaAs.
• Advanced Electronics: Used in the fabrication of high-electron-mobility transistors (HEMTs), laser diodes, and photodetectors.
• Optoelectronic Devices: Essential for producing light-emitting diodes (LEDs) and solar cells that require precise indium incorporation.
• Materials Science Research: Serves as a fundamental reagent in academic and industrial R&D for developing new semiconductor nanomaterials and quantum structures.
• Thin-Film Deposition: Employed in atomic layer deposition (ALD) and other vapor-phase techniques for creating uniform, conformal coatings.

Basic Information

Product Name	Trimethyl(Trimethylphosphine)Indium
CAS No.	51341-34-5
Molecular Formula	C9H24InP
Molecular Weight	266.08 g/mol
Synonyms	Trimethylindium Trimethylphosphine Adduct; In(CH3)3·P(CH3)3; TMIn-TMP; (Trimethylphosphine)trimethylindium; Indium, trimethyl-, compd. with trimethylphosphine (1:1); Trimethylindium-trimethylphosphine; TMIn(TMP); InMe3(PMe3)
EINECS	Contact for details

Quality Control

Our Trimethyl(Trimethylphosphine)Indium is produced and handled under stringent quality management systems to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is accompanied by a comprehensive Certificate of Analysis (COA) detailing key parameters such as assay, metal impurities, and physical properties. We adhere to relevant industry standards for high-purity metalorganic precursors.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place (recommended 2-8°C) under an inert atmosphere (argon or nitrogen) due to its properties of being easily oxidized and highly volatile. Keep away from heat, sparks, and open flame.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid / solid
Identification (IR)	Conforms
Assay (In Content)	> 99.9% (metals basis)
Purity (GC)	> 99.5%
Trace Metals (ICP-MS)	< 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.