Description

Aluminiumgalliumarsenide CAS NO 37382-15-3 is a critical III-V compound semiconductor material. Its precise bandgap, which can be tuned by adjusting the aluminium-to-gallium ratio, makes it indispensable for advanced optoelectronic and high-frequency electronic devices. This material is essential for manufacturers and R&D facilities in the semiconductor, photonics, and telecommunications industries seeking to develop next-generation components.

Application

• High-Efficiency Solar Cells: Used as a key component in multi-junction photovoltaic cells for space and concentrated photovoltaic (CPV) applications due to its optimal bandgap for sunlight absorption.
• Laser Diodes: Serves as the active layer in red and infrared semiconductor laser diodes for applications in optical communications, medical equipment, and consumer electronics.
• Light-Emitting Diodes (LEDs): Employed in the fabrication of high-brightness LEDs, particularly for red and infrared wavelengths.
• High-Electron-Mobility Transistors (HEMTs): Used as a substrate or buffer layer for manufacturing transistors essential in high-frequency, low-noise amplifiers for satellite and radar systems.
• Photodetectors: Forms the core of high-speed, sensitive photodetectors for fiber-optic communication networks.
• Research & Development: A fundamental material for academic and industrial research in solid-state physics, novel semiconductor structures, and quantum devices.

Basic Information

Product Name	Aluminiumgalliumarsenide
CAS No.	37382-15-3
Molecular Formula	AlxGa1-xAs
Molecular Weight	Varies with composition (x)
Synonyms	AlGaAs; Aluminum Gallium Arsenide; Gallium Aluminum Arsenide; (Al,Ga)As; AlxGa1-xAs; III-V Semiconductor Alloy; Aluminum Gallium Arsenide Wafer; Aluminum Gallium Arsenide Substrate
EINECS	Contact for details

Quality Control

Our Aluminiumgalliumarsenide is produced and tested under stringent quality management protocols. We provide material with guaranteed composition uniformity, crystal quality, and electronic properties tailored to specific applications. Certificates of Analysis (COA) detailing parameters such as aluminium fraction (x), carrier concentration, mobility, and defect density are available for every batch to ensure compliance with your technical specifications.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C). The material should be handled in a controlled environment to prevent surface contamination. For long-term storage of wafers or epi-ready substrates, a nitrogen-purged cabinet or desiccator is recommended.

Specification

Item	Specification
Appearance	Gray crystalline solid, wafer, or epi-layer
Aluminium Fraction (x)	0.1 - 0.9 (Customizable)
Bandgap (eV)	1.42 - 2.16 (Varies with x)
Carrier Type	N-type, P-type, or Semi-insulating
Carrier Concentration	1014 - 1019 cm-3
Electron Mobility	Contact for details
Hole Mobility	Contact for details
Dislocation Density	< 5000 cm-2 (EPD)
Wafer Diameter / Orientation	2", 3", 4", 6"; (100) ±0.5°
Surface Roughness (Ra)	< 0.5 nm (Epi-ready)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.