Description

Indium Nitride (CAS NO 25617-98-5) is a high-purity, advanced semiconductor material with significant potential in next-generation optoelectronic and electronic devices. Its direct bandgap and excellent thermal stability make it a critical component for high-performance applications. This material is essential for researchers and manufacturers in the semiconductor, photonics, and advanced materials sectors seeking to develop cutting-edge technologies.

Application

• Semiconductor fabrication for high-electron-mobility transistors (HEMTs) and other high-frequency devices.
• Key material in the development of indium gallium nitride (InGaN) alloys for blue, green, and ultraviolet light-emitting diodes (LEDs) and laser diodes.
• Research and development of high-efficiency photovoltaic cells and solar energy conversion systems.
• Production of specialized coatings and thin films for optical and electronic applications.
• Use as a precursor in metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) processes.
• Advanced material research in spintronics and quantum computing components.

Basic Information

Product Name	Indium Nitride
CAS No.	25617-98-5
Molecular Formula	InN
Molecular Weight	128.83 g/mol
Synonyms	Indium(III) Nitride; Nitrogen Indide; Indium Mononitride; InN; Nitridoinidylium; Indium-Nitrogen Alloy; Azanylidyneindium
EINECS	Contact for details

Quality Control

Our Indium Nitride is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity. We offer material tailored for research and development as well as production-grade specifications. A comprehensive Certificate of Analysis (COA), detailing purity, crystallographic phase, and impurity profiles, is provided with each shipment to guarantee material integrity for your critical applications.

Storage

Preserve in a tightly closed container, protected from light. Due to its sensitivity to oxidation, long-term storage under an inert atmosphere (argon or nitrogen) in a moisture-free environment is strongly recommended. Store at room temperature (15-25°C) in a cool, dry, well-ventilated area away from incompatible materials.

Specification

Item	Specification
Appearance	Black to dark gray powder or crystalline solid
Identification (XRD)	Conforms to Wurtzite structure (InN)
Purity (InN Basis)	≥ 99.9% (99.99% & 99.999% available)
Primary Metal Impurities (ICP-MS)	≤ 100 ppm total
Oxygen Content	≤ 1.0 wt%
Carbon Content	≤ 0.5 wt%
Particle Size (D50)	1-10 µm (other sizes available)
Crystallite Size (XRD)	20-100 nm

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.