Description

Gallium Nitride (GaN) is a high-performance, wide-bandgap semiconductor compound essential for next-generation power electronics and optoelectronic devices. Its superior thermal stability, high breakdown voltage, and exceptional electron mobility enable significant efficiency and miniaturization advantages over traditional silicon-based technologies. This material is critical for manufacturers and R&D teams in the semiconductor, LED lighting, RF communication, and power conversion industries seeking to develop faster, smaller, and more energy-efficient products.

Application

• Power Electronics: Core material for high-efficiency power transistors (HEMTs), converters, and inverters in electric vehicles, data centers, and renewable energy systems.
• Optoelectronics & Lighting: Substrate and active layer for high-brightness blue, green, and white Light-Emitting Diodes (LEDs) and laser diodes (LDs).
• RF & Microwave Devices: Enables high-power, high-frequency amplifiers and components for 5G/6G telecommunications, satellite communications, and radar systems.
• Photodetectors & Sensors: Used in ultraviolet (UV) photodetectors for flame sensing, environmental monitoring, and secure communications.
• Advanced Research: Fundamental material for exploring novel quantum devices, high-temperature electronics, and cutting-edge semiconductor physics.

Basic Information

Product Name	Gallium Nitride
CAS No.	25617-97-4
Molecular Formula	GaN
Molecular Weight	83.73 g/mol
Synonyms	GaN; Gallium(III) nitride; Gallium mononitride; EINECS 247-129-0
EINECS	247-129-0

Quality Control

Our Gallium Nitride is produced and controlled under stringent quality management systems to ensure batch-to-batch consistency and performance reliability for industrial and research applications. Each lot is characterized for critical parameters including crystal structure, purity, and particle morphology. A comprehensive Certificate of Analysis (COA) detailing specific test results is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). This material is moisture-sensitive; keep the original container sealed under an inert atmosphere when not in use to prevent degradation.

Specification

Item	Specification
Appearance	Yellowish powder or crystalline solid
Identification (XRD)	Matches standard pattern for hexagonal wurtzite GaN
Purity (GaN Basis)	≥ 99.9% (99.99% & 99.999% available)
Crystal Phase	Wurtzite (Hexagonal)
Primary Particle Size	Contact for details (various grades available)
Metallic Impurities (ICP-MS)	< 100 ppm total
Oxygen Content	< 1 wt%
Specific Surface Area (BET)	Contact for details

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.