Description

Indium Phosphide (CAS NO 22398-99-8) is a critical III-V compound semiconductor material prized for its superior electron velocity and direct bandgap properties. This compound is fundamental for enabling high-frequency, high-power, and optoelectronic device performance that is unattainable with silicon-based technologies. It is an essential raw material for manufacturers in the telecommunications, photonics, and advanced electronics industries seeking to push the boundaries of speed and efficiency.

Application

• High-Speed Transistors & ICs: Core substrate material for fabricating High Electron Mobility Transistors (HEMTs) and Heterojunction Bipolar Transistors (HBTs) used in millimeter-wave communication and radar systems.
• Optoelectronic Devices: Primary material for lasers, light-emitting diodes (LEDs), and photodetectors operating in the near-infrared spectrum, crucial for fiber optic communication networks.
• Solar Cells: Used in the production of high-efficiency, multi-junction photovoltaic cells for space and concentrated solar power applications.
• Quantum Technology: Serves as a platform for developing quantum dots, nanowires, and other nanostructures for next-generation computing and sensing.
• Semiconductor Research & Development: Key material for academic and industrial R&D into novel semiconductor devices and physics.

Basic Information

Product Name	Indium Phosphide
CAS No.	22398-99-8
Molecular Formula	InP
Molecular Weight	145.79 g/mol
Synonyms	Indium(III) Phosphide; Phosphinidyneindium; Indium Monophosphide; Indium Phosphide (InP); InP; 22398-99-8
EINECS	244-959-5

Quality Control

Our Indium Phosphide is produced and tested under stringent quality management protocols to ensure batch-to-batch consistency and high purity for demanding semiconductor applications. We provide comprehensive Certificates of Analysis (COA) detailing key parameters such as purity, crystalline structure, and trace elemental impurities. Our quality systems are designed to support the rigorous standards of the electronics and photonics supply chains.

Storage

Preserve in a tightly closed container, protected from light. Due to its nature as an easily oxidized material, long-term storage under an inert atmosphere (argon or nitrogen) is recommended to preserve surface quality and stoichiometry. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). Keep away from incompatible materials.

Specification

Item	Specification
Appearance	Dark grey crystalline pieces or powder
Identification (XRD)	Complies with standard pattern for InP
Purity (InP Basis)	≥ 99.99% (4N) / 99.999% (5N) available
Crystal Structure	Zinc Blende (Cubic)
Carrier Concentration	Contact for details
Electron Mobility	Contact for details
Trace Metals (ICP-MS)	< 10 ppm total (for 5N grade)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.