Description

Indium Phosphide (CAS NO 22398-80-7) is a critical III-V compound semiconductor material prized for its superior electron velocity and direct bandgap properties. This compound is fundamental for enabling high-frequency, high-power, and optoelectronic device performance that other materials cannot achieve. It is an essential raw material for manufacturers in the semiconductor, photonics, and advanced research sectors seeking to push the boundaries of speed and efficiency.

Application

• High-Speed Transistors & ICs: Core substrate material for fabricating high-electron-mobility transistors (HEMTs) and integrated circuits used in millimeter-wave communication and radar systems.
• Optoelectronic Devices: Primary substrate for manufacturing semiconductor lasers, light-emitting diodes (LEDs), and photodetectors operating in the near-infrared spectrum.
• Fiber Optic Communication: Essential in the production of laser sources and receivers for long-haul, high-bandwidth optical fiber networks.
• Solar Cells: Used in the development of high-efficiency, multi-junction photovoltaic cells for space and concentrated solar power applications.
• Quantum Technology: Serves as a platform material for research and development in quantum dots, nanowires, and other nanostructures.
• Sensing & Metrology: Applied in advanced sensors for spectroscopy, environmental monitoring, and precision measurement equipment.

Basic Information

Product Name	Indium Phosphide
CAS No.	22398-80-7
Molecular Formula	InP
Molecular Weight	145.79 g/mol
Synonyms	Indium(III) Phosphide; Phosphinidyneindium; Indium Monophosphide; InP; Indium Phosphide (InP); Indium Phosphide Wafer; Indium Phosphide Substrate; Indium Phosphide Crystal
EINECS	244-959-5

Quality Control

Our Indium Phosphide is produced and handled under stringent quality management systems to ensure batch-to-batch consistency and purity for demanding semiconductor applications. Material specifications are rigorously verified through advanced analytical techniques including X-ray diffraction (XRD), Hall effect measurement, photoluminescence (PL), and mass spectrometry. A comprehensive Certificate of Analysis (COA) detailing crystalline quality, electrical properties, and impurity profiles is provided with each shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). The material is moisture-sensitive; keep the original packaging sealed under an inert atmosphere (e.g., nitrogen or argon) when not in use to prevent surface oxidation and degradation.

Specification

Item	Specification
Appearance	Dark gray, metallic crystalline pieces or wafer
Identification (XRD)	Complies with standard pattern for InP
Crystal Structure	Zinc Blende (Cubic)
Purity (Metals Basis)	> 99.999% (5N)
Carrier Concentration	Contact for details
Electron Mobility	Contact for details
Dislocation Density	< 5000 / cm² (for wafer grade)
Surface Orientation	(100), (111), etc. (for wafer grade)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.