Description

Phenylgermane is an organogermanium compound of significant interest in advanced materials science and semiconductor research. This compound matters for its role as a crucial precursor in the deposition of germanium-containing thin films via chemical vapor deposition (CVD) and atomic layer deposition (ALD). Industries involved in microelectronics, photovoltaics, and nanotechnology require high-purity phenylgermane to develop next-generation semiconductor devices and optical coatings.

Application

• Semiconductor Manufacturing: As a high-purity precursor for the CVD/ALD deposition of germanium (Ge) and germanium-carbon (Ge:C) thin films.
• Photovoltaics: Used in the research and development of advanced thin-film solar cells to enhance light absorption and efficiency.
• Optoelectronics: A key material for creating germanium-based waveguides, detectors, and other integrated photonic components.
• Nanomaterials Synthesis: Serves as a germanium source for the controlled synthesis of germanium nanoparticles and nanowires.
• Surface Modification: Employed in surface chemistry to create germanium-terminated monolayers on various substrates for sensor applications.
• Catalysis Research: Investigated as a ligand or precursor in organometallic chemistry and homogeneous catalysis development.
• Polymer Science: Used as a monomer or additive for synthesizing germanium-containing polymers with unique thermal and optical properties.

Basic Information

Product Name	Phenylgermane
CAS No.	2875-92-5
Molecular Formula	C6H8Ge
Molecular Weight	152.73 g/mol
Synonyms	Germane, phenyl-; Phenyl germanium hydride; Monophenylgermane; (Phenyl)germane; GeH3Ph; C6H5GeH3; Phenylgermanium trihydride
EINECS	220-718-3

Quality Control

Our Phenylgermane is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity, critical for sensitive electronic applications. Each lot undergoes comprehensive analysis including Gas Chromatography (GC) and NMR spectroscopy to verify identity and quantify impurities. A Certificate of Analysis (COA) detailing purity, moisture content, and metal impurities is provided with every shipment, ensuring compliance with the exacting standards of the semiconductor and advanced materials industries.

Storage

Preserve in a tightly closed container, protected from light. Due to its properties of being easily oxidized (store under inert atmosphere) and hygroscopic (moisture-sensitive), this material must be stored under an inert gas (argon or nitrogen) in a cool, dry, and well-ventilated area. Recommended storage temperature is 2-8°C to maintain stability and prolong shelf life. The container must be kept tightly sealed when not in use to prevent exposure to air and moisture.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms to structure
Assay (GC)	≥ 98.0%
Purity (GC Area %)	≥ 99.0%
Moisture (Karl Fischer)	≤ 100 ppm
Metal Impurities (ICP-MS)	≤ 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.