Description

Bis(tert-Butylimino)Bis(tert-Butylamino)Tungsten is a high-purity organometallic compound used as a volatile precursor in advanced materials deposition. This compound is critical for applications requiring precise, high-quality tungsten-containing thin films with excellent step coverage and conformity. It is primarily needed by manufacturers in the semiconductor, photovoltaic, and specialty coating industries for atomic layer deposition (ALD) and chemical vapor deposition (CVD) processes.

Application

• Semiconductor Manufacturing: As a volatile tungsten precursor for depositing tungsten nitride (WN), tungsten carbide (WC), or elemental tungsten (W) thin films via ALD and CVD for diffusion barriers, gate electrodes, and interconnects.
• Advanced Photovoltaics: For the deposition of tungsten-based back-contact or buffer layers in next-generation solar cells to enhance efficiency and stability.
• Protective & Hard Coatings: Used in CVD processes to create ultra-hard, wear-resistant tungsten carbide or tungsten nitride coatings on cutting tools, molds, and mechanical components.
• Nanomaterials Synthesis: As a molecular source for the controlled synthesis of tungsten-based nanoparticles, nanowires, and 2D materials for catalysis and electronics.
• Optical & Decorative Coatings: For depositing tungsten or tungsten oxide films on glass and other substrates to create coatings with specific optical, electrical, or aesthetic properties.
• Research & Development: Serving as a key reagent in academic and industrial R&D for exploring new materials, deposition chemistries, and process optimizations in microelectronics.

Basic Information

Product Name	Bis(tert-Butylimino)Bis(tert-Butylamino)Tungsten
CAS No.	1578257-35-8
Molecular Formula	C16H36N4W
Molecular Weight	428.34 g/mol
Synonyms	Tungsten Bis(tert-butylimino)bis(tert-butylamide); (tBuN)2W(NtBu)2; TBITBT; Bis(N-tert-butylimido)bis(tert-butylamido)tungsten(VI); Tungsten(VI) tert-butylimide tert-butylamide complex; ALD/CVD Tungsten Precursor; Tungsten Amido Imido Complex; W(NtBu)2(NHtBu)2
EINECS	Contact for details

Quality Control

Our Bis(tert-Butylimino)Bis(tert-Butylamino)Tungsten is manufactured under strict quality management systems to ensure batch-to-batch consistency and high purity, essential for reproducible thin-film performance. Every lot is supported by a comprehensive Certificate of Analysis (COA) detailing key parameters such as purity, metal content, and impurity profiles. We adhere to relevant industry standards for high-purity electronic-grade materials to support our global customers in semiconductor and advanced manufacturing.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., nitrogen or argon) due to its moisture-sensitive and easily oxidized nature. Keep away from heat, open flames, and incompatible materials.

Specification

Item	Specification
Appearance	Yellow to orange crystalline solid or powder
Identification (IR)	Conforms to structure
Purity (NMR / HPLC)	≥ 98.0%
Tungsten (W) Content	42.0 - 44.0 %
Volatile Impurities (NMR / GC)	≤ 1.0%
Melting Point	Contact for details

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.