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Tris(Diethylamino)Gallium(Iii) CAS NO 194611-64-8
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CAS No.:194611-64-8
Grade:Pharmacy Grade
Content:99.9%
Brand:Customizable
Packaging:Customizable
Description
Tris(Diethylamino)Gallium(Iii) is a highly reactive organometallic compound used as a precursor in advanced material synthesis. This compound is critical for depositing high-purity gallium-containing thin films with precise stoichiometric control. It is essential for manufacturers and R&D facilities in the semiconductor, photovoltaics, and optoelectronics industries seeking to develop next-generation electronic and optical devices.
Application
- Metal-Organic Chemical Vapor Deposition (MOCVD): A key gallium source for the epitaxial growth of III-V compound semiconductors like GaN, GaAs, and GaP.
- Atomic Layer Deposition (ALD): Used as a precursor for depositing ultra-thin, conformal gallium oxide (Ga₂O₃) or nitride films for advanced gate dielectrics and protective coatings.
- Semiconductor Manufacturing: Enables the production of high-electron-mobility transistors (HEMTs), laser diodes (LDs), and light-emitting diodes (LEDs).
- Photovoltaic Research: Employed in the development of high-efficiency thin-film solar cells and other photovoltaic materials.
- Optical Coatings: Serves as a precursor for creating specialized optical films with specific refractive indices.
- Catalysis Research: Investigated as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
Basic Information
| Item | Detail |
|---|---|
| Product Name | Tris(Diethylamino)Gallium(Iii) |
| CAS No. | 194611-64-8 |
| Molecular Formula | C₁₂H₃₀GaN₃ or [(C₂H₅)₂N]₃Ga |
| Molecular Weight | 271.19 g/mol |
| Synonyms | Tris(diethylamido)gallium(III); Gallium tris(diethylamide); Tris(N,N-diethylamino)gallane; TDEAG; Ga(NEt₂)₃; Diethylamino gallium; Gallium tri(diethylamide); (Diethylamino)gallium |
| EINECS | Contact for details |
Quality Control
Our Tris(Diethylamino)Gallium(Iii) is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is analyzed to meet exacting specifications for metal-organic precursors, with trace metal analysis performed via ICP-MS. A comprehensive Certificate of Analysis (COA) detailing purity, assay, and impurity profiles is provided with every shipment.
Storage
Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated place at recommended temperatures (typically 2-8°C or as specified on the label). This material is hygroscopic (moisture-sensitive) and easily oxidized; it must be stored under an inert atmosphere (argon or nitrogen) and handled using air-free techniques to maintain purity and reactivity.
Specification
| Item | Specification |
|---|---|
| Appearance | Colorless to pale yellow liquid |
| Identification (IR) | Conforms to structure |
| Assay (NMR/Titration) | ≥ 99.0% (Typical 99.5%) |
| Density (at 20°C) | ~0.95 g/mL |
| Trace Metals (ICP-MS) | < 10 ppm total |
| Chloride (Cl) Content | < 50 ppm |
| Oxygen Content | < 100 ppm |
Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.
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