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Tris(Diethylamino)Gallium(Iii) CAS NO 194611-64-8


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CAS No.:194611-64-8

Grade:Pharmacy Grade

Content:99.9%

Brand:Customizable

Packaging:Customizable

Description

Tris(Diethylamino)Gallium(Iii) is a highly reactive organometallic compound used as a precursor in advanced material synthesis. This compound is critical for depositing high-purity gallium-containing thin films with precise stoichiometric control. It is essential for manufacturers and R&D facilities in the semiconductor, photovoltaics, and optoelectronics industries seeking to develop next-generation electronic and optical devices.

Application

  • Metal-Organic Chemical Vapor Deposition (MOCVD): A key gallium source for the epitaxial growth of III-V compound semiconductors like GaN, GaAs, and GaP.
  • Atomic Layer Deposition (ALD): Used as a precursor for depositing ultra-thin, conformal gallium oxide (Ga₂O₃) or nitride films for advanced gate dielectrics and protective coatings.
  • Semiconductor Manufacturing: Enables the production of high-electron-mobility transistors (HEMTs), laser diodes (LDs), and light-emitting diodes (LEDs).
  • Photovoltaic Research: Employed in the development of high-efficiency thin-film solar cells and other photovoltaic materials.
  • Optical Coatings: Serves as a precursor for creating specialized optical films with specific refractive indices.
  • Catalysis Research: Investigated as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.

Basic Information

Item Detail
Product Name Tris(Diethylamino)Gallium(Iii)
CAS No. 194611-64-8
Molecular Formula C₁₂H₃₀GaN₃ or [(C₂H₅)₂N]₃Ga
Molecular Weight 271.19 g/mol
Synonyms Tris(diethylamido)gallium(III); Gallium tris(diethylamide); Tris(N,N-diethylamino)gallane; TDEAG; Ga(NEt₂)₃; Diethylamino gallium; Gallium tri(diethylamide); (Diethylamino)gallium
EINECS Contact for details

Quality Control

Our Tris(Diethylamino)Gallium(Iii) is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is analyzed to meet exacting specifications for metal-organic precursors, with trace metal analysis performed via ICP-MS. A comprehensive Certificate of Analysis (COA) detailing purity, assay, and impurity profiles is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated place at recommended temperatures (typically 2-8°C or as specified on the label). This material is hygroscopic (moisture-sensitive) and easily oxidized; it must be stored under an inert atmosphere (argon or nitrogen) and handled using air-free techniques to maintain purity and reactivity.

Specification

Item Specification
Appearance Colorless to pale yellow liquid
Identification (IR) Conforms to structure
Assay (NMR/Titration) ≥ 99.0% (Typical 99.5%)
Density (at 20°C) ~0.95 g/mL
Trace Metals (ICP-MS) < 10 ppm total
Chloride (Cl) Content < 50 ppm
Oxygen Content < 100 ppm

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.

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