Description

Tantalum Tetraethoxide Dimethylaminoethoxide is a highly specialized metal-organic compound, also known as a tantalum alkoxide, valued for its role as a volatile and reactive precursor in advanced materials synthesis. Its primary commercial significance lies in enabling the precise deposition of tantalum-containing films, which are critical for high-performance electronic and optical components. This product is essential for manufacturers and R&D facilities in the semiconductor, thin-film coating, and specialty ceramics industries seeking to develop next-generation devices.

Application

• Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD): As a key precursor for depositing high-purity tantalum oxide (Ta2O5) and tantalum nitride (TaN) thin films in semiconductor fabrication.
• Optical Coatings: Used in the sol-gel process to create high-refractive-index layers for anti-reflective coatings, optical filters, and laser components.
• Specialty Catalysts: Serves as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
• Advanced Ceramics: A starting material for producing fine, high-purity tantalum-based ceramic powders via pyrolysis or hydrolysis routes.
• Nanomaterial Synthesis: Employed in the bottom-up synthesis of tantalum oxide nanoparticles and nanostructures with controlled morphology.
• Surface Modification: Used to functionalize material surfaces with tantalum alkoxide groups for improved adhesion or specific chemical properties.

Basic Information

Product Name	Tantalum Tetraethoxide Dimethylaminoethoxide
CAS No.	172901-22-3
Molecular Formula	C10H25NO5Ta
Molecular Weight	426.23 g/mol
Synonyms	Tantalum(V) Ethoxide Dimethylaminoethoxide; Dimethylaminoethanolate Tantalum Ethoxide; Ta(OEt)4(DMAE); Tantalum Ethoxide DMAE Adduct; Tantalum Tetraethoxide (Dimethylaminoethanolate); (Dimethylamino)ethanolato(1-)-κO,κN]tris(ethanolato-κO)tantalum; Tantalum Alkoxide Precursor
EINECS	Contact for details

Quality Control

Our Tantalum Tetraethoxide Dimethylaminoethoxide is manufactured under stringent conditions to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of electronic materials applications. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing key parameters such as tantalum content, purity, and trace metal impurities. We adhere to a robust quality management system, and specifications can be tailored to meet specific customer and project needs.

Storage

Preserve in a tightly closed container, protected from light. This product is hygroscopic (moisture-sensitive) and light-sensitive (store away from light). For long-term stability, store under an inert atmosphere (argon or nitrogen) in a cool, dry place at room temperature (15-25°C). Keep away from strong acids and oxidizing agents.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms to structure
Assay (Ta content)	≥ 99.0% (by ICP-OES)
Purity (GC)	≥ 98.0%
Density (at 20°C)	~1.25 g/mL
Trace Metals (ICP-MS)	< 10 ppm each (Na, K, Ca, Fe, etc.)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.