Description

Trimethylphosphine(Hexafluoro-2,4-Pentanedionate)Copper (I) is a highly specialized organometallic compound used as a volatile precursor in advanced material synthesis. This compound matters for its ability to deliver high-purity copper in thin film deposition processes critical for next-generation electronics. It is primarily needed by manufacturers and R&D facilities in the semiconductor, nanotechnology, and specialty chemical sectors seeking reliable, high-performance metal-organic sources.

Application

• Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD): As a volatile copper(I) precursor for depositing ultra-thin, high-purity copper films and nanostructures.
• Semiconductor Fabrication: For creating copper interconnects, seed layers, and other metallic components in microelectronic devices.
• Catalysis Research: Serving as a catalyst or catalyst precursor in organic synthesis and polymerization reactions.
• Materials Science R&D: For the development of novel copper-containing materials, including metal-organic frameworks (MOFs) and hybrid composites.
• Optoelectronics: In the production of thin films for photovoltaic cells, light-emitting diodes (LEDs), and transparent conductive oxides.
• Surface Coating: For applying functional copper coatings with specific electrical or catalytic properties.

Basic Information

Product Name	Trimethylphosphine(Hexafluoro-2,4-Pentanedionate)Copper (I)
CAS No.	135707-05-0
Molecular Formula	C8H9CuF6O2P
Molecular Weight	353.67 g/mol
Synonyms	Copper(I) hexafluoroacetylacetonate trimethylphosphine adduct; (Hexafluoroacetylacetonato)(trimethylphosphine)copper(I); Cu(hfac)(PMe3); Trimethylphosphine-copper(I) hexafluoroacetylacetonate; Copper(I) trimethylphosphine hexafluoro-2,4-pentanedionate; Volatile Copper(I) CVD Precursor; PMe3Cu(hfac)
EINECS	Contact for details

Quality Control

Our Trimethylphosphine(Hexafluoro-2,4-Pentanedionate)Copper (I) is produced under stringent conditions to ensure batch-to-batch consistency and high purity, meeting the exacting standards required for electronic-grade applications. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing purity, identity, and key impurity profiles. We adhere to relevant quality management frameworks to guarantee supply reliability for critical manufacturing processes.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (e.g., nitrogen or argon) at recommended temperatures between 2°C and 8°C to minimize decomposition and oxidation. The container should be kept in a cool, dry, well-ventilated place away from incompatible materials.

Specification

Item	Specification
Appearance	Off-white to pale yellow crystalline solid or powder
Identification (IR)	Conforms to structure
Assay (Cu content)	≥ 98.0%
Purity (HPLC/GC)	≥ 99.0%
Volatile Impurities	≤ 0.5%
Melting Point	Contact for details
Solubility	Soluble in common organic solvents

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.