Description

Gallium Indium Arsenide (Ga0.47In0.53As) is a high-purity III-V compound semiconductor material with a lattice constant matched to InP substrates. This precise stoichiometry is critical for its exceptional electronic and optoelectronic properties, enabling high-frequency and low-noise device performance. It is an essential material for manufacturers in the telecommunications, advanced sensing, and research sectors requiring reliable epitaxial layers for cutting-edge components.

Application

• High-Electron-Mobility Transistors (HEMTs): Core material for channels in low-noise amplifiers and high-speed switches used in satellite communications and radar systems.
• Photodetectors & Photodiodes: Key absorbing layer in near-infrared (NIR) detectors for fiber optic communication (1.3-1.55 µm range), LIDAR, and spectroscopic instruments.
• Quantum Cascade Lasers (QCLs): Used in the active region for mid-infrared laser sources applied in environmental gas sensing and medical diagnostics.
• Research & Development: Fundamental substrate for epitaxial growth in academic and industrial R&D exploring novel semiconductor heterostructures and quantum devices.
• Thermophotovoltaic (TPV) Cells: Employed as a low-bandgap material to convert infrared radiation into electrical energy in specialized power generation systems.

Basic Information

Product Name	Gallium Indium Arsenide (Ga0.47In0.53As)
CAS No.	106097-59-0
Molecular Formula	Ga0.47In0.53As
Molecular Weight	~189.39 g/mol (Average)
Synonyms	Indium Gallium Arsenide; InGaAs; GaInAs; In0.53Ga0.47As; Gallium Indium Monoarsenide; Lattice-matched InGaAs/InP; Ternary III-V Semiconductor; (Gallium,Indium) Arsenide
EINECS	Contact for details

Quality Control

Our Gallium Indium Arsenide is produced and tested under stringent controls to ensure batch-to-batch consistency and high material performance. Quality is verified through advanced analytical techniques including X-ray diffraction (XRD) for lattice matching, Hall effect measurement for electrical properties, and glow discharge mass spectrometry (GDMS) for ultra-trace metallic impurities. A Certificate of Analysis (COA) detailing composition, purity, and key physical parameters is provided with each shipment.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (e.g., argon or nitrogen) in a cool, dry place at room temperature (15-25°C). This material is easily oxidized; prolonged exposure to air must be avoided to maintain surface integrity and stoichiometry.

Specification

Item	Specification
Appearance	Metallic gray solid pieces or ingot
Composition (x in InxGa1-xAs)	0.53 ± 0.005
Lattice Constant (Å)	5.8687 ± 0.0005
Carrier Type	n-type (typical)
Carrier Concentration (cm-3)	≤ 5 x 1016 (undoped)
Mobility (cm²/V·s)	> 10,000 (at 300K, typical)
Purity (Metallic Basis)	> 99.999% (5N)
Major Impurities (GDMS)	Si, C, O, S < 1 ppm each

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.