Description

Aluminum Gallium Magnesium Zinc Oxide, Manganese-Doped is a multi-component, doped oxide material engineered for advanced electronic and optoelectronic applications. This compound is valued for its tunable bandgap and electrical properties, which are critical for developing next-generation semiconductor devices. It is primarily sought by manufacturers and R&D facilities in the semiconductor, photovoltaics, and specialized ceramics industries for applications requiring precise control over conductivity and luminescence.

Application

• Transparent Conductive Oxide (TCO) Layers: Used in thin-film transistors (TFTs), touch screens, and flexible displays.
• Phosphor and Luminescent Materials: Acts as a host material for manganese-activated phosphors in LED lighting and display technologies.
• Photovoltaic Devices: Employed as a buffer or window layer in thin-film solar cells to enhance efficiency and carrier transport.
• Gas Sensors: Utilized in solid-state chemical sensors due to its sensitivity to various gases at elevated temperatures.
• Advanced Ceramics: A component in specialty ceramics requiring specific electronic or catalytic properties.
• Research & Development: Serves as a key material for academic and industrial research into novel semiconductor and optoelectronic devices.

Basic Information

Product Name	Aluminum Gallium Magnesium Zinc Oxide, Manganese-Doped
CAS No.	100402-46-8
Molecular Formula	Typically represented as (Al,Ga,Mg,Zn,Mn)Ox; Contact for details
Molecular Weight	Contact for details
Synonyms	Mn-doped AGMZO; Manganese Doped Aluminum Gallium Magnesium Zinc Oxide; Doped Zinc Oxide-based TCO; AGMZO:Mn; (Al,Ga,Mg,Zn)O:Mn; Multication-doped Zinc Oxide; Transparent Conductive Oxide Doped with Mn
EINECS	Contact for details

Quality Control

Our Aluminum Gallium Magnesium Zinc Oxide, Manganese-Doped is produced under controlled conditions to ensure batch-to-batch consistency and high performance. Quality is verified through advanced analytical techniques including X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDS/EDX), and photoluminescence (PL) spectroscopy. A Certificate of Analysis (COA) detailing composition, purity, and key performance metrics is provided with each shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated area at room temperature (15-25°C). This material is hygroscopic (moisture-sensitive) and should be kept under dry conditions to prevent degradation of its electronic properties.

Specification

Item	Specification
Appearance	Fine powder, color varies (white to pale yellow/brown)
Identification (XRD)	Consistent with doped wurtzite structure
Primary Metal Composition (ICP-OES)	Zn, Al, Ga, Mg, Mn as specified per grade
Manganese Doping Level	0.1 - 5.0 mol% (customizable)
Purity (Metals Basis)	> 99.9%
Particle Size (D50)	Customizable (e.g., 50 nm - 5 µm)
Bandgap (UV-Vis)	3.2 - 4.0 eV (tunable)
Specific Surface Area (BET)	10 - 50 m²/g

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.