Description

Tetrakis(Dimethylamino)Hafnium is a highly specialized organometallic compound, primarily utilized as a precursor in advanced thin-film deposition processes. Its core value proposition lies in enabling the precise, high-purity deposition of hafnium-based films, which are critical for modern semiconductor and optical applications. This product is essential for manufacturers and R&D facilities in the electronics, nanotechnology, and specialty materials sectors seeking reliable, high-performance chemical vapor deposition (CVD) and atomic layer deposition (ALD) sources.

Application

• Semiconductor Manufacturing: As a key precursor for the ALD and CVD of hafnium oxide (HfO₂) high-k dielectric films in advanced logic and memory devices.
• Optical Coatings: Deposition of hafnium-containing films for high-refractive-index optical coatings and laser components.
• Nanotechnology Research: Serves as a critical material source for synthesizing hafnium-based nanostructures and thin films in academic and industrial R&D.
• Advanced Materials Synthesis: Used in the production of specialized ceramics and composite materials requiring hafnium incorporation.
• Catalysis: Potential use as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.

Basic Information

Product Name	Tetrakis(Dimethylamino)Hafnium
CAS No.	19962-11-9
Molecular Formula	C8H24HfN4
Molecular Weight	350.86 g/mol
Synonyms	Tetrakis(dimethylamido)hafnium(IV); Hafnium(IV) tetrakis(dimethylamide); Hf(NMe2)4; TDMAH; Hafnium tetrakis(dimethylamide); Hafnium dimethylamide; TDMH; Hafnium(4+) tetrakis(dimethylazanide)
EINECS	Contact for details

Quality Control

Our Tetrakis(Dimethylamino)Hafnium is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity, which is paramount for deposition applications. All materials are accompanied by a comprehensive Certificate of Analysis (COA) detailing key parameters such as assay, metal content, and trace impurity levels. We adhere to relevant industry standards and can provide materials tailored to specific customer purity requirements, including electronic grade specifications.

Storage

Preserve in a tightly closed container, protected from light. Due to its properties of being highly volatile, easily oxidized, and strictly light-sensitive, this material must be stored under a dry, inert atmosphere (argon or nitrogen) at recommended temperatures between 2°C and 8°C. The storage area should be cool, dry, and well-ventilated, away from sources of ignition, heat, and incompatible materials.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid
Identification (IR)	Conforms
Assay (Hf content)	≥ 99.9% (metals basis)
Purity (by NMR/GC)	≥ 99.5%
Density (at 20°C)	~1.3 g/mL
Volatile Impurities	≤ 0.5%
Trace Metals (ICP-MS)	As per customer grade requirement

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.