Description

Ce(Tmhd)4 is a high-purity cerium-based coordination compound, specifically cerium(IV) tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate). This advanced material is valued for its role as a volatile precursor in the production of high-performance thin films via chemical vapor deposition (CVD) and atomic layer deposition (ALD). It is essential for manufacturers and R&D facilities in the semiconductor, optical coating, and advanced ceramics industries seeking precise control over film composition and properties.

Application

• Semiconductor Manufacturing: As a critical precursor for depositing cerium oxide (CeO₂) high-k dielectric and buffer layers in microelectronics and memory devices.
• Optical Coatings: Used in CVD/ALD processes to create anti-reflective, protective, and specialized optical films for lenses, lasers, and sensors.
• Catalysis Research: Serves as a catalyst precursor or model compound in studies for automotive exhaust treatment, petroleum refining, and organic synthesis.
• Advanced Ceramics: A key starting material for synthesizing doped-ceria ceramics used in solid oxide fuel cells (SOFCs) and oxygen sensors.
• Nanomaterial Synthesis: Employed in the controlled synthesis of cerium-based nanoparticles and nanostructures for catalytic and biomedical applications.
• Chemical Vapor Infiltration (CVI): Used to manufacture ceramic matrix composites (CMCs) for aerospace and high-temperature applications.

Basic Information

Product Name	Ce(Tmhd)4
CAS No.	18960-54-8
Molecular Formula	C44H76CeO8
Molecular Weight	882.23 g/mol
Synonyms	Cerium(IV) tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate); Cerium(4+) tetrakis(2,2,6,6-tetramethylheptane-3,5-dionate); Cerium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate); Ce(TMHD)4; Ce(thd)4; Cerium(IV) 2,2,6,6-tetramethyl-3,5-heptanedionate; Cerium β-diketonate; Cerium precursor for CVD/ALD
EINECS	Contact for details

Quality Control

Our Ce(Tmhd)4 is produced under stringent conditions to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of advanced materials manufacturing. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing key parameters such as purity, metal content, and trace impurities. We adhere to ISO 9001 quality management principles, and our specifications are designed to align with the needs of semiconductor and thin-film deposition processes.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C). This compound is hygroscopic (moisture-sensitive) and must be handled under an inert atmosphere (e.g., nitrogen or argon) to prevent degradation. For long-term stability, consider storage in a desiccator or glovebox.

Specification

Item	Specification
Appearance	Yellow to orange crystalline powder
Identification (IR)	Conforms to structure
Assay (Ce content)	Min. 99.9% (metals basis)
Purity (HPLC)	Min. 99.5%
Melting Point	~250-270°C (dec.)
Volatility	Sublimes at 150-200°C / 0.1 Torr
Solubility	Soluble in organic solvents (e.g., toluene, THF)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.