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Hafnium(Iv) Chloride CAS NO 13499-05-3


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CAS No.:13499-05-3

Grade:Pharmacy Grade

Content:99.9%

Brand:Customizable

Packaging:Customizable

Description

Hafnium(IV) Chloride (CAS NO 13499-05-3) is a high-purity inorganic halide essential for advanced materials synthesis and semiconductor manufacturing. This compound serves as a critical precursor for depositing hafnium-based thin films, which are fundamental to modern electronics and high-performance ceramics. It is primarily required by manufacturers in the semiconductor, optical coating, and specialty chemical industries seeking reliable, high-quality raw materials for cutting-edge applications.

Application

  • Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): A key precursor for depositing hafnium oxide (HfO₂) high-k dielectric films in semiconductor gate stacks and memory devices.
  • Optical Coatings: Used in the production of high-refractive-index and protective coatings for precision optics and laser components.
  • Catalyst Synthesis: Acts as a Lewis acid catalyst or a catalyst precursor in specialized organic synthesis and polymerization reactions.
  • Ceramics & Refractories: A starting material for manufacturing advanced hafnium carbide (HfC) and hafnium nitride (HfN) ceramics used in extreme environments.
  • Research & Development: Employed in academic and industrial R&D for developing new materials, including metal-organic frameworks (MOFs) and nanocomposites.
  • Metal Organic Chemical Vapor Deposition (MOCVD): For the growth of specialized compound semiconductor layers.

Basic Information

Product Name Hafnium(IV) Chloride
CAS No. 13499-05-3
Molecular Formula HfCl₄
Molecular Weight 320.30 g/mol
Synonyms Hafnium Tetrachloride; Hafnium Chloride; Tetrachlorohafnium; Hafnium(4+) tetrachloride; HfCl₄; Hafnium chloride (HfCl₄); Hafnium chloride, anhydrous
EINECS 236-826-5

Quality Control

Our Hafnium(IV) Chloride is manufactured under stringent controls to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of the electronics and advanced materials industries. Quality is verified through advanced analytical techniques including Inductively Coupled Plasma Mass Spectrometry (ICP-MS) and X-ray Diffraction (XRD). A comprehensive Certificate of Analysis (COA) detailing purity, metallic impurities, and physical characteristics is provided with each shipment.

Storage

Preserve in a tightly closed container, protected from light. Due to its hygroscopic (moisture-sensitive) nature, this material must be stored under a dry, inert atmosphere (e.g., argon or nitrogen) in a cool, dry, and well-ventilated area. Recommended storage temperature is 15-25°C. Keep the container tightly sealed when not in use to prevent degradation from atmospheric moisture.

Specification

Item Specification
Appearance White to off-white crystalline powder or lumps
Identification (IR) Conforms
Assay (HfCl₄) ≥ 99.9% (Metals basis)
Assay (Hf) ≥ 55.5%
Zirconium (Zr) ≤ 2.0%
Iron (Fe) ≤ 50 ppm
Other Metallic Impurities ≤ 100 ppm (each)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.

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