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Hafnium(Iv) Chloride CAS NO 13499-05-3
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CAS No.:13499-05-3
Grade:Pharmacy Grade
Content:99.9%
Brand:Customizable
Packaging:Customizable
Description
Hafnium(IV) Chloride (CAS NO 13499-05-3) is a high-purity inorganic halide essential for advanced materials synthesis and semiconductor manufacturing. This compound serves as a critical precursor for depositing hafnium-based thin films, which are fundamental to modern electronics and high-performance ceramics. It is primarily required by manufacturers in the semiconductor, optical coating, and specialty chemical industries seeking reliable, high-quality raw materials for cutting-edge applications.
Application
- Chemical Vapor Deposition (CVD) & Atomic Layer Deposition (ALD): A key precursor for depositing hafnium oxide (HfO₂) high-k dielectric films in semiconductor gate stacks and memory devices.
- Optical Coatings: Used in the production of high-refractive-index and protective coatings for precision optics and laser components.
- Catalyst Synthesis: Acts as a Lewis acid catalyst or a catalyst precursor in specialized organic synthesis and polymerization reactions.
- Ceramics & Refractories: A starting material for manufacturing advanced hafnium carbide (HfC) and hafnium nitride (HfN) ceramics used in extreme environments.
- Research & Development: Employed in academic and industrial R&D for developing new materials, including metal-organic frameworks (MOFs) and nanocomposites.
- Metal Organic Chemical Vapor Deposition (MOCVD): For the growth of specialized compound semiconductor layers.
Basic Information
| Product Name | Hafnium(IV) Chloride |
| CAS No. | 13499-05-3 |
| Molecular Formula | HfCl₄ |
| Molecular Weight | 320.30 g/mol |
| Synonyms | Hafnium Tetrachloride; Hafnium Chloride; Tetrachlorohafnium; Hafnium(4+) tetrachloride; HfCl₄; Hafnium chloride (HfCl₄); Hafnium chloride, anhydrous |
| EINECS | 236-826-5 |
Quality Control
Our Hafnium(IV) Chloride is manufactured under stringent controls to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of the electronics and advanced materials industries. Quality is verified through advanced analytical techniques including Inductively Coupled Plasma Mass Spectrometry (ICP-MS) and X-ray Diffraction (XRD). A comprehensive Certificate of Analysis (COA) detailing purity, metallic impurities, and physical characteristics is provided with each shipment.
Storage
Preserve in a tightly closed container, protected from light. Due to its hygroscopic (moisture-sensitive) nature, this material must be stored under a dry, inert atmosphere (e.g., argon or nitrogen) in a cool, dry, and well-ventilated area. Recommended storage temperature is 15-25°C. Keep the container tightly sealed when not in use to prevent degradation from atmospheric moisture.
Specification
| Item | Specification |
|---|---|
| Appearance | White to off-white crystalline powder or lumps |
| Identification (IR) | Conforms |
| Assay (HfCl₄) | ≥ 99.9% (Metals basis) |
| Assay (Hf) | ≥ 55.5% |
| Zirconium (Zr) | ≤ 2.0% |
| Iron (Fe) | ≤ 50 ppm |
| Other Metallic Impurities | ≤ 100 ppm (each) |
Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.
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Each batch undergoes strict QC, accompanied by COA, MSDS, and full compliance with international standards.
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