Description

Hafnium Silicide (CAS NO 12401-56-8) is an advanced inorganic compound valued for its exceptional thermal stability and electrical properties. It serves as a critical high-performance material in demanding high-temperature and semiconductor applications. This product is essential for manufacturers and R&D facilities in the aerospace, electronics, and advanced ceramics industries seeking reliable, high-purity materials.

Application

Hafnium Silicide is utilized in advanced technological sectors where material performance under extreme conditions is paramount. Key applications include:

• Semiconductor Manufacturing: As a contact material and diffusion barrier in integrated circuits due to its low electrical resistivity and compatibility with silicon.
• High-Temperature Coatings: As a component in protective coatings and thermal barrier systems for aerospace engine parts and turbine blades.
• Advanced Ceramics & Composites: As a reinforcing phase or precursor for producing high-strength, oxidation-resistant ceramic matrix composites (CMCs).
• Thin Film Deposition: As a sputtering target for physical vapor deposition (PVD) to create thin films with specific electronic or protective properties.
• Research & Development: As a precursor material in solid-state chemistry and materials science research for developing new intermetallic compounds.
• Thermoelectric Materials: Investigated for use in thermoelectric devices for energy harvesting due to its specific electronic structure.

Basic Information

Product Name	Hafnium Silicide
CAS No.	12401-56-8
Molecular Formula	HfSi2 (most common)
Molecular Weight	234.66 g/mol (for HfSi2)
Synonyms	Hafnium Disilicide; Silaneylidynehafnium; Hafnium(IV) Silicide; Dihafnium Pentasilicide (Hf2Si5); Hafnium Silicon Alloy; HfSi2; HfSix; Hafnium Silicide Powder; Hafnium Silicide Target
EINECS	235-650-8

Quality Control

Our Hafnium Silicide is produced and handled under strict quality management protocols to ensure batch-to-batch consistency and high purity. We employ advanced analytical techniques, including X-ray diffraction (XRD) and inductively coupled plasma (ICP) analysis, to verify chemical composition and phase purity. A Certificate of Analysis (COA) detailing lot-specific results is provided with each shipment, ensuring full traceability and compliance with your technical requirements.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). This material is moisture-sensitive (hygroscopic) and should be kept under an inert atmosphere (e.g., argon or nitrogen) for long-term storage to prevent surface oxidation. Keep away from strong acids and strong oxidizing agents.

Specification

Item	Specification
Appearance	Gray to black powder or solid
Identification (XRD)	Conforms to HfSi2 phase
Assay (HfSi2 Purity)	≥ 99.0%
Particle Size (D50)	Customizable (e.g., 1-10 µm, 10-45 µm)
Metallic Impurities (ICP)	≤ 0.5% total
Oxygen Content	≤ 1.0%
Nitrogen Content	≤ 0.5%
Bulk Density	Contact for details

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.