Description

Germanium Arsenide is an important compound semiconductor material with a defined crystalline structure. Its unique electronic properties make it valuable for advanced optoelectronic and semiconductor applications. This high-purity material is essential for research and development in the electronics, photonics, and materials science sectors. Germanium Arsenide CAS NO 12271-72-6 is supplied to meet the stringent requirements of industrial and academic laboratories.

Application

• Research and development of novel semiconductor devices and heterostructures.
• Fabrication of specialized optoelectronic components, such as infrared detectors and LEDs.
• Use as a precursor or doping agent in thin-film deposition processes (e.g., Chemical Vapor Deposition).
• Fundamental studies in solid-state physics and materials science.
• Potential applications in high-efficiency thermoelectric materials.
• Advanced photovoltaic research for next-generation solar cells.

Basic Information

Product Name	Germanium Arsenide
CAS No.	12271-72-6
Molecular Formula	AsGe
Molecular Weight	149.48 g/mol
Synonyms	Arsenic germanide; Germanium monoarsenide; GeAs; Germanium-arsenic alloy; Arsanylidynylgermane
EINECS	Contact for details

Quality Control

Our Germanium Arsenide is produced and handled under controlled conditions to ensure batch-to-batch consistency and high purity. Quality is verified through advanced analytical techniques. A Certificate of Analysis (COA) detailing purity, crystalline phase, and impurity levels is provided with each shipment to guarantee material integrity for your critical applications.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). Keep the container sealed under an inert atmosphere to minimize oxidation and moisture uptake. Isolate from incompatible materials such as strong acids and strong oxidizing agents.

Specification

Item	Specification
Appearance	Dark gray crystalline pieces or powder
Identification (XRD)	Conforms to structure
Assay (GeAs)	≥ 99.9% (Metals basis)
Trace Metals Analysis (ICP-MS)	≤ 100 ppm total
Crystalline Phase	Single phase

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.