Description

(Diethylphosphino)Dimethylindium is an organometallic compound featuring both indium and phosphorus centers, making it a valuable precursor in advanced materials synthesis. This compound matters for its role in depositing high-purity indium phosphide (InP) and related III-V semiconductor thin films, which are critical for optoelectronic and high-speed electronic devices. Industries such as semiconductor manufacturing, LED production, and photovoltaic research require this high-purity source material for precise vapor deposition processes like MOCVD and ALD.

Application

• Metalorganic Chemical Vapor Deposition (MOCVD): As a key precursor for the epitaxial growth of indium phosphide (InP) and indium-containing III-V semiconductor layers.
• Atomic Layer Deposition (ALD): Used in the controlled, layer-by-layer deposition of thin films for advanced nanoelectronics and photonic devices.
• Optoelectronics Manufacturing: Essential for producing high-performance light-emitting diodes (LEDs), laser diodes, and photodetectors operating in specific wavelength ranges.
• High-Efficiency Photovoltaics: Serves as a source material in the fabrication of next-generation solar cells, including multi-junction and concentrated photovoltaic (CPV) cells.
• High-Frequency Electronics: Used in the production of transistors and integrated circuits for high-speed wireless communication and satellite technology.
• Materials Science Research: Employed in academic and industrial R&D for developing novel semiconductor alloys and quantum dot structures.
• Catalysis Research: Investigated as a potential catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.

Basic Information

Item	Detail
Product Name	(Diethylphosphino)Dimethylindium
CAS No.	12148-78-6
Molecular Formula	C6H16InP
Molecular Weight	225.99 g/mol
Synonyms	Dimethyl(diethylphosphino)indium; Diethylphosphinodimethylindium; (Diethylphosphanyl)dimethylindium; In(CH3)2(PEt2); DMIn(PEt2); (Et2P)InMe2; Organoindium precursor; MOCVD/ALD InP precursor
EINECS	Contact for details

Quality Control

Our (Diethylphosphino)Dimethylindium is produced and handled under strict inert atmosphere conditions to ensure maximum purity and performance. Each batch undergoes rigorous quality testing, including advanced analytical techniques, to meet the exacting standards required for semiconductor-grade precursors. A comprehensive Certificate of Analysis (COA) detailing purity, metal content, and impurity profiles is provided with every shipment to guarantee traceability and compliance with your process specifications.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (argon or nitrogen) in a cool, dry, and well-ventilated place. Due to its moisture-sensitive and easily oxidized nature, the container must be kept sealed and only opened in a controlled, dry environment. Recommended long-term storage temperature is between 2°C and 8°C.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid / solid
Identification (IR)	Conforms
Purity (HPLC/GC)	≥ 99.9% (99.99% available)
Indium (In) Content	Contact for details
Trace Metals (ICP-MS)	< 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.