Description

Gallium Phosphide is a high-purity III-V compound semiconductor material with significant optoelectronic properties. Its direct bandgap makes it a critical component for manufacturing efficient light-emitting devices and high-speed electronic circuits. This material is essential for industries focused on advanced electronics, photonics, and solid-state research, where precise material characteristics are paramount for device performance and reliability.

Application

• LED Manufacturing: A key substrate and epitaxial layer material for producing red, orange, yellow, and green light-emitting diodes (LEDs).
• Optoelectronic Devices: Used in the fabrication of laser diodes, photodetectors, and optical waveguides for telecommunications and sensing applications.
• High-Frequency Electronics: Serves as a substrate for gallium arsenide phosphide (GaAsP) and other ternary/binary compounds in high-electron-mobility transistors (HEMTs) and microwave devices.
• Solar Cells: Employed in multi-junction photovoltaic cells for space and concentrated photovoltaic (CPV) systems due to its favorable bandgap.
• Research & Development: A fundamental material for academic and industrial R&D in semiconductor physics, material science, and novel device structures.
• Specialty Coatings: Used in thin-film applications requiring specific hardness, thermal stability, or optical properties.

Basic Information

Item	Detail
Product Name	Gallium Phosphide
CAS No.	12063-98-8
Molecular Formula	GaP
Molecular Weight	100.70 g/mol
Synonyms	Gallium(III) Phosphide; Gallium Monophosphide; GaP; Phosphinidylidinegallium; EINECS 235-057-3
EINECS	235-057-3

Quality Control

Our Gallium Phosphide is produced and tested under stringent quality management systems to ensure batch-to-batch consistency and high purity. We provide comprehensive Certificates of Analysis (COA) detailing key parameters such as purity, crystalline structure, and trace elemental impurities. Our quality protocols are designed to meet the exacting standards of the semiconductor and advanced materials industries.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). Keep away from incompatible materials such as strong acids and strong oxidizing agents. The container should be kept tightly sealed to prevent contamination from moisture or particulates.

Specification

Item	Specification
Appearance	Orange to dark red crystals or powder
Identification (XRD)	Conforms to standard
Purity (GaP Basis)	≥ 99.99% (4N)
Primary Crystal Structure	Zinc Blende (Cubic)
Bandgap (at 300K)	2.26 eV (Direct)
Trace Metals (ICP-MS)	≤ 100 ppm total
Particle Size (Custom)	Available upon request

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.