Description

Gallium Arsenide (GaAs) is a critical III-V compound semiconductor material with superior electronic properties compared to elemental silicon. Its high electron mobility and direct bandgap make it indispensable for high-frequency, high-power, and optoelectronic applications. This material is essential for manufacturers in the semiconductor, photonics, and advanced electronics industries seeking performance beyond the limits of silicon.

Application

• Semiconductor Devices: Primary substrate for high-electron-mobility transistors (HEMTs), heterojunction bipolar transistors (HBTs), and monolithic microwave integrated circuits (MMICs) used in radar, satellite communications, and 5G infrastructure.
• Optoelectronics: Core material for manufacturing light-emitting diodes (LEDs), laser diodes (LDs), and photodetectors, particularly for infrared wavelengths.
• Photovoltaic Cells: Used in high-efficiency multi-junction solar cells for space and concentrated photovoltaic (CPV) systems due to its excellent sunlight absorption characteristics.
• Integrated Circuits: Foundational material for application-specific integrated circuits (ASICs) requiring ultra-high-speed operation.
• Research & Development: Serves as a key material in academic and industrial R&D for exploring next-generation semiconductor physics and device architectures.

Basic Information

Product Name	Gallium Arsenide
CAS No.	1303-00-0
Molecular Formula	GaAs
Molecular Weight	144.64 g/mol
Synonyms	Gallium monoarsenide; Gallium(III) arsenide; Arsanylidenegallium; GaAs; Gallium arsenide (GaAs); Gallium-arsenic alloy; EINECS 215-114-8
EINECS	215-114-8

Quality Control

Our Gallium Arsenide is produced and tested under stringent quality management systems to ensure batch-to-batch consistency and high purity for demanding semiconductor applications. Quality is verified through advanced analytical techniques including glow discharge mass spectrometry (GDMS) and Hall effect measurement. A comprehensive Certificate of Analysis (COA) detailing crystalline properties, electrical parameters, and impurity levels is provided with each shipment.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, well-ventilated area at room temperature (15-25°C). Keep away from incompatible materials such as strong acids and strong oxidizing agents. Handle in accordance with good industrial hygiene and safety practice.

Specification

Item	Specification
Appearance	Dark gray, metallic crystalline pieces or wafer
Crystal Orientation	(100), (111)A, (111)B, or customized
Purity (Metals Basis)	> 99.999% (5N), 99.9999% (6N) available
Carrier Concentration	SEMI, VGF, LEC grades available
Electron Mobility (at 300K)	> 8000 cm²/V·s (for specific doped grades)
Etch Pit Density (EPD)	< 5000 / cm² (for low EPD grades)
Diameter (for wafers)	50.8 mm (2"), 76.2 mm (3"), 100 mm (4"), 150 mm (6")
Primary Impurities (by GDMS)	Si, C, O, S, Zn, Mn, Mg, Cu below detection limits per grade

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.