Description

Cyclopentadienyl Tris(Dimethylamino) Hafnium CAS NO 941596-80-1 is a highly specialized organometallic compound primarily used as a precursor in advanced thin-film deposition processes. This compound is critical for achieving precise stoichiometric control and high-purity film growth in semiconductor manufacturing. It is an essential material for research and production facilities in the electronics, optoelectronics, and nanotechnology sectors requiring high-performance hafnium-based coatings.

Application

• Atomic Layer Deposition (ALD): A key precursor for depositing hafnium oxide (HfO₂) and hafnium nitride (HfN) high-k dielectric films in advanced semiconductor devices.
• Chemical Vapor Deposition (CVD): Used in CVD processes to create uniform, conformal hafnium-containing thin films for microelectronics and protective coatings.
• Semiconductor Fabrication: Enables the production of gate dielectrics, capacitor layers, and diffusion barriers in next-generation logic and memory chips.
• Optical Coatings: Serves as a starting material for high-refractive-index films used in optical filters, lenses, and laser components.
• Materials Science Research: A valuable reagent for synthesizing novel hafnium complexes and studying organometallic reaction mechanisms.
• Catalyst Development: Investigated as a potential precursor or component in specialized catalytic systems for organic synthesis.

Basic Information

Product Name	Cyclopentadienyl Tris(Dimethylamino) Hafnium
CAS No.	941596-80-1
Molecular Formula	C₁₁H₂₃HfN₃
Molecular Weight	392.09 g/mol
Synonyms	Hafnium(IV) tris(dimethylamido) cyclopentadienyl; CpHf(NMe₂)₃; (η⁵-Cyclopentadienyl)tris(dimethylamido)hafnium; Cyclopentadienylhafnium tris(dimethylamide); Tris(dimethylamino)(η⁵-cyclopentadienyl)hafnium; Hafnium, (η⁵-2,4-cyclopentadien-1-yl)tris(dimethylamino)-; HfCp(NMe₂)₃
EINECS	Contact for details

Quality Control

Our Cyclopentadienyl Tris(Dimethylamino) Hafnium is manufactured and handled under strict inert atmosphere conditions to ensure purity and stability. Each batch is characterized by advanced analytical techniques to meet the stringent requirements of semiconductor-grade precursors. A comprehensive Certificate of Analysis (COA) detailing purity, metal content, and impurity profiles is provided with every shipment to guarantee traceability and performance consistency for your critical applications.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (argon or nitrogen) at temperatures between 2°C and 8°C (refrigerated) to minimize thermal decomposition and oxidation. This compound is highly volatile, easily oxidized, and strictly light-sensitive; it must be handled exclusively in a controlled, oxygen- and moisture-free environment (glove box or Schlenk line). Keep away from heat, open flames, and incompatible materials.

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid or low-melting solid
Identification (NMR)	Conforms to structure
Purity (HPLC/NMR)	≥ 99.0%
Hafnium (Hf) Content	45.0 - 47.0 %
Trace Metals (ICP-MS)	≤ 10 ppm total (Na, K, Ca, Fe, etc.)
Chloride (Cl) Content	≤ 50 ppm
Volatile Residue	≤ 0.5 %

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.