Description

Tris(Diethylamino)(Ethylimino)Tantalum is a highly specialized organometallic compound of tantalum, primarily used as a precursor in advanced thin-film deposition processes. Its value lies in its ability to deliver high-purity tantalum nitride or tantalum oxide films with exceptional conformity and electrical properties. This material is essential for manufacturers in the semiconductor and microelectronics industries, particularly for fabricating diffusion barriers, gate electrodes, and capacitor dielectrics in next-generation integrated circuits.

Application

• Atomic Layer Deposition (ALD): A key precursor for depositing uniform, conformal tantalum nitride (TaN) and tantalum oxide (Ta2O5) thin films in semiconductor manufacturing.
• Chemical Vapor Deposition (CVD): Used in thermal and plasma-enhanced CVD processes to create high-performance diffusion barrier layers in copper interconnects.
• Microelectronics Fabrication: Critical for producing gate electrodes, capacitor dielectrics, and resistive layers in memory (DRAM, Flash) and logic devices.
• Optical Coatings: Enables the deposition of high-refractive-index tantalum-based films for precision optical components and anti-reflective coatings.
• Surface Engineering: Applied in research and development for creating corrosion-resistant and wear-resistant tantalum-containing surface layers on various substrates.

Basic Information

Item	Detail
Product Name	Tris(Diethylamino)(Ethylimino)Tantalum
CAS No.	67313-80-8
Molecular Formula	C15H39N4Ta
Molecular Weight	462.42 g/mol
Synonyms	Tris(diethylamido)(ethylimido)tantalum(V); Tantalum(V) tris(diethylamide) ethylimide; TDEAT; Ta(NEt2)3(NEt); (Ethylimido)tris(diethylamido)tantalum; Tris(diethylamino)(ethylimino)tantalum(V); Tantalum precursor TDEAT; TAIMATA
EINECS	Contact for details

Quality Control

Every batch of Tris(Diethylamino)(Ethylimino)Tantalum is manufactured and analyzed under strict quality management systems to ensure consistency and high purity for demanding deposition applications. We provide comprehensive Certificates of Analysis (COA) with each shipment, detailing key parameters such as purity, metal content, and impurity profiles. Our quality protocols are designed to meet the stringent requirements of the semiconductor industry, supporting traceability and reliability in your supply chain.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., nitrogen or argon) due to its moisture-sensitive and easily oxidized nature. Keep away from heat, ignition sources, and incompatible materials such as strong acids and oxidizing agents.

Specification

Item	Specification
Appearance	Clear, yellow to amber liquid
Identification (IR)	Conforms to reference spectrum
Assay (Tantalum content)	≥ 99.9% (metals basis)
Purity (GC)	≥ 99.5%
Density (at 20°C)	~1.2 g/mL
Volatile Impurities	< 0.5%
Particulates (Filter Test)	Passes 0.2 µm filtration

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.