Description

Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium is a high-purity, thermally stable metal-organic compound, also known as hafnium(IV) tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate). This advanced material serves as a critical precursor for depositing high-k dielectric hafnium oxide (HfO₂) thin films, which are essential for enhancing the performance and miniaturization of modern semiconductor devices. It is primarily utilized by manufacturers and R&D facilities in the electronics, nanotechnology, and advanced materials sectors seeking reliable, high-quality deposition sources.

Application

• Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD): As a key precursor for depositing hafnium oxide (HfO₂) high-k dielectric films in semiconductor gate stacks and memory devices.
• Advanced Microelectronics Fabrication: For manufacturing next-generation logic chips, DRAM, and flash memory where precise thin-film control is paramount.
• Optical and Protective Coatings: Used in the production of specialized optical coatings and corrosion-resistant layers on various substrates.
• Catalysis Research: Acts as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
• Nanomaterials Synthesis: Serves as a starting material for the synthesis of hafnium-based nanoparticles and nanostructures.
• Academic and Industrial R&D: For fundamental research in materials science, surface chemistry, and the development of new electronic materials.

Basic Information

Product Name	Tetrakis(2,2,6,6-Tetramethyl-3,5-Heptanedionato)Hafnium
CAS No.	63370-90-1
Molecular Formula	C₄₄H₇₆HfO₈
Molecular Weight	935.48 g/mol
Synonyms	Hafnium(IV) 2,2,6,6-tetramethyl-3,5-heptanedionate; Hafnium tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionate); Hf(TMHD)₄; Hf(thd)₄; Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium(IV); Hafnium(4+) tetrakis(2,2,6,6-tetramethylheptane-3,5-dionate); Hafnium tetrakis(dipivaloylmethanate)
EINECS	Contact for details

Quality Control

Our Tetrakis(2,2,6,6-tetramethyl-3,5-heptanedionato)hafnium is manufactured under controlled conditions to ensure batch-to-batch consistency and high purity suitable for demanding deposition processes. Quality is verified through advanced analytical techniques including NMR, FT-IR, and elemental analysis. A comprehensive Certificate of Analysis (COA) detailing purity, metal content, and trace impurity levels is provided with each shipment to support your quality assurance protocols.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C). This product is hygroscopic (moisture-sensitive) and must be handled under an inert atmosphere (e.g., nitrogen or argon) to prevent degradation. Keep away from strong acids and strong oxidizing agents.

Specification

Item	Specification
Appearance	White to off-white crystalline powder
Identification (IR)	Conforms to structure
Assay (Hf content)	≥ 99.9% (metals basis)
Purity (HPLC)	≥ 99.5%
Melting Point	168 - 172 °C
Trace Metals (ICP-MS)	≤ 100 ppm total
Solubility	Soluble in organic solvents

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.