Description

Triscyclopropylindium(III) is an organometallic compound of indium, widely recognized for its utility as a volatile precursor in advanced material synthesis. Its significance lies in its ability to act as a high-purity indium source for the deposition of indium-containing thin films, which are critical for next-generation electronic and optoelectronic devices. This compound is essential for researchers and manufacturers in the semiconductor, photovoltaic, and specialty chemical industries seeking precise and efficient deposition processes.

Application

• Metal-Organic Chemical Vapor Deposition (MOCVD): A key precursor for depositing high-purity indium-containing films, such as indium nitride (InN) or indium gallium nitride (InGaN), for LED and laser diode fabrication.
• Atomic Layer Deposition (ALD): Used in the precise, layer-by-layer growth of indium oxide (In2O3) or indium tin oxide (ITO) films for transparent conductive electrodes in displays and solar cells.
• Semiconductor Research & Development: Serves as a fundamental reagent in the development of novel III-V and II-VI compound semiconductor materials.
• Thin-Film Transistor (TFT) Manufacturing: Employed in the production of oxide semiconductor layers for high-performance, flexible electronics.
• Catalysis: Investigated as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
• Nanomaterial Synthesis: Acts as a starting material for the controlled synthesis of indium-based nanoparticles and quantum dots.

Basic Information

Product Name	Triscyclopropylindium(III)
CAS No.	23719-81-5
Molecular Formula	C9H15In
Molecular Weight	226.03 g/mol
Synonyms	Tris(cyclopropyl)indium; Cyclopropylindium; Indium tris(cyclopropyl); In(C3H5)3; Tris(cyclopropyl)indium(III); Organoindium precursor; MOCVD indium source; ALD indium precursor
EINECS	Contact for details

Quality Control

Our Triscyclopropylindium(III) is produced and handled under stringent quality management protocols to ensure batch-to-batch consistency and high purity, critical for sensitive deposition processes. Each lot is analyzed using advanced techniques including NMR, elemental analysis (EA), and gas chromatography (GC) to verify identity and purity. A comprehensive Certificate of Analysis (COA) detailing all specifications is provided with every shipment.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (argon or nitrogen) at temperatures between 2°C and 8°C (refrigerated) to ensure maximum stability. This compound is hygroscopic (moisture-sensitive) and easily oxidized; therefore, it must be handled exclusively in a moisture- and oxygen-free environment (glove box or Schlenk line).

Specification

Item	Specification
Appearance	Colorless to pale yellow liquid or low-melting solid
Identification (NMR)	Conforms to structure
Purity (GC)	≥ 99.5%
Indium Content (EA)	50.8% ± 0.5%
Volatile Impurities (GC)	≤ 0.3%
Trace Metals (ICP-MS)	≤ 10 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.