Description

Bis(N,N'-Di-I-Propylpentylamidinato)Manganese(II) is a high-purity, organometallic manganese complex designed for advanced materials synthesis. This compound serves as a critical precursor for depositing high-quality manganese-containing thin films via chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. It is essential for manufacturers and R&D teams in the semiconductor, catalysis, and specialty chemical industries seeking precise control over material composition and properties at the nanoscale.

Application

• Semiconductor Manufacturing: As a volatile precursor for the CVD/ALD deposition of manganese oxide (MnO, MnO2) and manganese silicate films for advanced logic and memory devices.
• Catalyst Synthesis: Used in the preparation of homogeneous and heterogeneous catalysts for oxidation and other organic transformation reactions.
• Surface Modification: For creating functional manganese-based coatings on various substrates to alter surface properties like conductivity or catalytic activity.
• Materials Research: A key starting material in academic and industrial R&D for developing new manganese-containing polymers, metal-organic frameworks (MOFs), and nanocomposites.
• Thin Film Electronics: Deposition of films for applications in sensors, solar cells, and transparent conductive oxides.

Basic Information

Product Name	Bis(N,N'-Di-I-Propylpentylamidinato)Manganese(II)
CAS No.	1188406-04-3
Molecular Formula	C26H56MnN4
Molecular Weight	479.68 g/mol
Synonyms	Manganese(II) bis(N,N'-diisopropylpentylamidinate); Bis(N,N'-diisopropylpentylamidinato)manganese; Mn(amd)2; Mn(DIPAMD)2; Manganese amidinate complex; Manganese CVD precursor; ALD manganese precursor; Manganese(II) amidinate
EINECS	Contact for details

Quality Control

Our Bis(N,N'-Di-I-Propylpentylamidinato)Manganese(II) is manufactured under stringent conditions to ensure batch-to-batch consistency and high purity, meeting the exacting requirements of electronic-grade materials. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing key parameters such as purity, metal content, and trace impurity profiles. We adhere to a rigorous quality management system to support our global customers in semiconductor and advanced materials applications.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (e.g., nitrogen or argon) at 2-8°C to minimize oxidation and thermal degradation. The container should be kept in a cool, dry, and well-ventilated area, away from incompatible materials.

Specification

Item	Specification
Appearance	Dark brown to black solid or liquid
Identification (IR)	Conforms to structure
Purity (HPLC)	≥ 98.0%
Manganese (Mn) Content	10.5 - 12.0 %
Volatility (TGA)	Suitable for CVD/ALD process
Trace Metals (ICP-MS)	≤ 10 ppm total (Na, K, Ca, Fe, etc.)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.