Description

Tetraisopropoxide (2,2,6,6-Tetramethyl-3,5-Heptanedionato)Tantalum is a high-purity metal-organic compound, specifically a tantalum(V) β-diketonate alkoxide complex. This material serves as a critical precursor for depositing high-quality tantalum oxide (Ta₂O₅) thin films via chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. It is essential for manufacturers in the semiconductor, optical coating, and advanced ceramics industries who require precise stoichiometric control and excellent film properties for next-generation electronic and photonic devices.

Application

• Semiconductor Manufacturing: As a high-purity precursor for the CVD/ALD deposition of tantalum oxide (Ta₂O₅) dielectric layers in DRAM capacitors and gate oxides.
• Optical Coatings: Used to produce thin films with high refractive index for anti-reflective coatings, interference filters, and optical waveguides.
• Specialty Ceramics: A starting material for the sol-gel synthesis of advanced tantalum-based ceramics and nanocomposites.
• Catalysis Research: Employed as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
• Surface Modification: For creating functional tantalum oxide surfaces on biomedical implants or corrosion-resistant coatings.
• Nanomaterials Synthesis: Serves as a tantalum source for the controlled growth of nanowires, nanoparticles, and other nanostructures.

Basic Information

Product Name	Tetraisopropoxide (2,2,6,6-Tetramethyl-3,5-Heptanedionato)Tantalum
CAS No.	177580-53-9
Molecular Formula	C₂₃H₄₅O₆Ta
Molecular Weight	604.51 g/mol
Synonyms	Tantalum(V) tetraisopropoxide 2,2,6,6-tetramethyl-3,5-heptanedionate; Tantalum tetraisopropoxide tmhd; Ta(OiPr)₄(tmhd); Tantalum isopropoxide tmhd complex; TAI(OCH(CH₃)₂)₄(C₁₁H₁₉O₂); TAI(O-i-Pr)₄(thd); ALD/CVD Tantalum Precursor; Tantalum β-diketonate alkoxide
EINECS	Contact for details

Quality Control

Our Tetraisopropoxide (2,2,6,6-Tetramethyl-3,5-Heptanedionato)Tantalum is manufactured under strict quality management systems to ensure batch-to-batch consistency and high purity suitable for demanding deposition processes. Each lot is analyzed to confirm identity, purity, and metal content. Certificates of Analysis (COA) detailing specific results are provided with every shipment. We support customer audits and can tailor specifications to meet the requirements of ISO, semiconductor (SEMI), or other relevant industry standards.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (e.g., nitrogen or argon) due to its moisture-sensitive (hygroscopic) nature. Keep away from heat and incompatible materials.

Specification

Item	Specification
Appearance	Yellow to amber liquid or low-melting solid
Identification (IR)	Conforms to structure
Assay (Ta content)	≥ 29.5 % (by ICP-OES)
Purity (GC)	≥ 99.0%
Density (at 20°C)	~1.15 g/cm³
Volatile Matter	< 1.0 %
Solubility	Soluble in common organic solvents (e.g., toluene, hexane, THF)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.