Description

Tantalum Tris(Diethylamido)-tert-Butylimide is a highly specialized organometallic compound used as a precursor in advanced materials synthesis. This compound is critical for depositing high-purity tantalum nitride (TaN) and tantalum carbonitride (TaCN) thin films via chemical vapor deposition (CVD) and atomic layer deposition (ALD) techniques. It is essential for manufacturers in the semiconductor and microelectronics industries seeking to produce next-generation integrated circuits and diffusion barriers.

Application

• Semiconductor Manufacturing: As a key precursor for the CVD/ALD deposition of tantalum nitride (TaN) diffusion barrier layers in copper interconnects.
• Microelectronics: For creating ultra-thin, conformal films on high-aspect-ratio structures in advanced logic and memory devices.
• Optical Coatings: Used in the production of wear-resistant and optically functional coatings on various substrates.
• Surface Engineering: For modifying material surfaces to enhance hardness, corrosion resistance, and thermal stability.
• Research & Development: Serving as a starting material in academic and industrial labs for developing new tantalum-containing materials and catalysts.
• Protective Coatings: Application in aerospace and cutting-tool industries for depositing hard, protective surface layers.

Basic Information

Product Name	Tantalum Tris(Diethylamido)-tert-Butylimide
CAS No.	169896-41-7
Molecular Formula	C16H39N4Ta
Molecular Weight	466.42 g/mol
Synonyms	Tris(diethylamido)(tert-butylimido)tantalum(V); tert-Butylimidotris(diethylamido)tantalum; Ta(NEt2)3(NtBu); Tantalum(V) tris(diethylamide) tert-butylimide; TBTDET; Tantalum Amido-Imido Precursor; TDEAT derivative
EINECS	Contact for details

Quality Control

Our Tantalum Tris(Diethylamido)-tert-Butylimide is produced and handled under strict quality management protocols to ensure batch-to-batch consistency and high purity, essential for sensitive deposition processes. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing key parameters such as purity, metal content, and impurity profiles. We adhere to industry best practices and can provide material tailored to meet specific customer and application requirements.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry, and well-ventilated place at room temperature (15-25°C). This material is hygroscopic (moisture-sensitive) and must be handled under an inert atmosphere (e.g., nitrogen or argon) to prevent decomposition.

Specification

Item	Specification
Appearance	Yellow to amber liquid
Identification (IR)	Conforms to reference spectrum
Purity (NMR / HPLC)	≥ 98.0%
Tantalum (Ta) Content	38.0 - 40.0 %
Density (at 20°C)	~1.2 g/mL
Volatile Matter	≤ 1.0 %
Chloride (Cl) Content	≤ 50 ppm
Metallic Impurities	≤ 100 ppm (total)

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.