Description

Tris(N n-Bis(trimethylsilyl)amide)thulium is a highly reactive, organometallic lanthanide complex primarily used as a specialized precursor in advanced materials synthesis. This compound matters for its role in facilitating precise chemical vapor deposition (CVD) and atomic layer deposition (ALD) processes, enabling the creation of high-purity thin films. It is essential for researchers and manufacturers in the semiconductor, electronics, and nanotechnology sectors who require high-performance materials for next-generation devices.

Application

• Thin Film Deposition: A key precursor for Chemical Vapor Deposition (CVD) and Atomic Layer Deposition (ALD) to produce thulium-containing films for optical and electronic applications.
• Semiconductor Manufacturing: Used in the fabrication of specialized doping layers and high-k dielectric materials for microelectronics.
• Phosphor and Luminescent Material Synthesis: Serves as a starting material for developing advanced phosphors used in displays, lighting, and bio-imaging probes.
• Catalysis Research: Acts as a catalyst or catalyst precursor in organic synthesis and polymerization reactions, particularly for stereoselective transformations.
• Nanoparticle Production: Employed in the synthesis of thulium-doped nanoparticles for medical diagnostics and photonic applications.
• Academic and Industrial R&D: A valuable reagent for exploring new organolanthanide chemistry and developing novel materials with tailored magnetic or optical properties.

Basic Information

Item	Detail
Product Name	Tris(N n-Bis(trimethylsilyl)amide)thulium
CAS No.	152763-53-6
Molecular Formula	C18H54N3Si6Tm
Molecular Weight	Contact for details
Synonyms	Tris[bis(trimethylsilyl)amido]thulium(III); Thulium tris(hexamethyldisilazide); Tm(hmds)3; Tm(N(SiMe3)2)3; Thulium(III) tris(bis(trimethylsilyl)amide); Tris(hexamethyldisilazanido)thulium; Thulium silylamide; Organothulium precursor
EINECS	Contact for details

Quality Control

Our Tris(N n-Bis(trimethylsilyl)amide)thulium is produced and handled under stringent quality protocols to ensure batch-to-batch consistency and high purity, critical for sensitive deposition processes. Each lot is supported by a comprehensive Certificate of Analysis (COA) detailing purity, metal content, and trace impurity profiles. We adhere to relevant industry standards for high-purity organometallic precursors to meet the exacting requirements of advanced materials research and production.

Storage

Preserve in a tightly closed container, protected from light. Store in a cool, dry place at room temperature (15-25°C) under an inert atmosphere (argon or nitrogen) due to its moisture-sensitive and easily oxidized nature. Keep away from strong acids and oxidizing agents.

Specification

Item	Specification
Appearance	Off-white to beige crystalline powder or solid
Identification (IR)	Conforms to structure
Assay (Tm content)	≥ 99.9% (Metals basis)
Purity (HPLC/NMR)	≥ 98.0%
Trace Metals (ICP-MS)	≤ 100 ppm total

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.