Description

Tetrakis(Diethylamino)Hafnium is a highly specialized organometallic compound of significant industrial importance. This compound serves as a critical precursor in advanced thin-film deposition processes, enabling the production of high-performance materials. It is essential for manufacturers in the semiconductor, photovoltaic, and specialty coating industries who require precise atomic layer control for next-generation electronic and optical devices.

Application

• Atomic Layer Deposition (ALD): A key precursor for depositing hafnium oxide (HfO₂) and hafnium nitride (HfN) high-k dielectric films in semiconductor fabrication.
• Chemical Vapor Deposition (CVD): Used in the production of hafnium-based coatings for thermal barrier and corrosion-resistant applications.
• Semiconductor Manufacturing: Critical for gate oxide layers in advanced microprocessors and memory chips to reduce leakage current and improve performance.
• Optoelectronics: Enables the fabrication of optical coatings and waveguides requiring specific refractive indices.
• Photovoltaic Cells: Used in the development of thin-film solar cells to enhance efficiency and stability.
• Catalysis Research: Acts as a catalyst or catalyst precursor in specialized organic synthesis and polymerization reactions.
• Specialty Alloys & Ceramics: Serves as a starting material for synthesizing advanced hafnium-containing alloys and ceramic composites.

Basic Information

Product Name	Tetrakis(Diethylamino)Hafnium
CAS No.	19962-12-0
Molecular Formula	C₁₆H₄₀HfN₄
Molecular Weight	462.03 g/mol
Synonyms	Hafnium(IV) diethylamide; Hafnium tetra(diethylamide); Tetrakis(diethylamido)hafnium(IV); Hf(NEt₂)₄; TDEAH; Hafnium Diethylamide; Hafnium Tetrakis(diethylamide); Hafnium(4+) tetrakis(N-ethylethanaminide)
EINECS	Contact for details

Quality Control

Our Tetrakis(Diethylamino)Hafnium is manufactured under stringent conditions to ensure the high purity and consistency required for sensitive deposition processes. Each batch is analyzed to meet exacting specifications for metal-organic precursors, with a focus on minimizing metallic and particulate impurities. A comprehensive Certificate of Analysis (COA) detailing assay, impurity profiles, and physical properties is provided with every shipment to guarantee traceability and performance.

Storage

Preserve in a tightly closed container, protected from light. Store under an inert atmosphere (e.g., nitrogen or argon) at temperatures between 2°C and 8°C (refrigerated) to maintain stability and prevent decomposition. Due to its highly volatile and easily oxidized nature, this material must be handled in a controlled, moisture-free environment. Keep away from heat, sparks, and open flames.

Specification

Item	Specification
Appearance	Clear, colorless to pale yellow liquid
Identification (IR)	Conforms to structure
Assay (Hf content)	≥ 99.9% (metals basis)
Purity (by NMR/GC)	≥ 99.5%
Density (at 20°C)	~1.12 g/mL
Volatile Impurities	< 0.5%
Particulate Matter	Passes 0.2 µm filtration test
Metallic Impurities (ICP-MS)	Each < 10 ppm

Note: Specifications can be tailored. Please contact us for the detailed technical data sheet of a specific grade.